Applying in Situ Bias During TOF-SIMS Analysis to Investigate Ion Migration in Perovskite Devices

An in situ electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices.