Abstract
Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 1018 cm−3 was achieved simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.
Original language | American English |
---|---|
Pages (from-to) | 4235-4239 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 48 |
Issue number | 7 |
DOIs | |
State | Published - 15 Jul 2019 |
Bibliographical note
Publisher Copyright:© 2019, The Minerals, Metals & Materials Society.
NREL Publication Number
- NREL/JA-5K00-73893
Keywords
- carrier density
- life time
- n-type CdTe
- time resolved photoluminescence