Approach to Defect-Free Lifetime and High Electron Density in CdTe

Joel Duenow, Steven Johnston, Monisha Shah, Wyatt Metzger, S. Swain, J. McCoy, K. Lynn

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 1018 cm−3 was achieved simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.

Original languageAmerican English
Pages (from-to)4235-4239
Number of pages5
JournalJournal of Electronic Materials
Issue number7
StatePublished - 15 Jul 2019

Bibliographical note

Publisher Copyright:
© 2019, The Minerals, Metals & Materials Society.

NREL Publication Number

  • NREL/JA-5K00-73893


  • carrier density
  • life time
  • n-type CdTe
  • time resolved photoluminescence


Dive into the research topics of 'Approach to Defect-Free Lifetime and High Electron Density in CdTe'. Together they form a unique fingerprint.

Cite this