Approach to Selfconsistent Analysis of a-Si:H Material and P-I-N Solar Cell Properties

doi:10.1109/PVSC.1997.654157

Approach to Selfconsistent Analysis of a-Si:H Material and P-I-N Solar Cell Properties

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Abstract

Results are presented and discussed for an approach to a self-consistent analysis of a-Si:H based p-i-n solar cells. This approach addresses uncertainties present in commonly made simulations which are based solely on the neutral dangling bond densities with 'arbitrary' adjustments in the parameters for the gap states in the intrinsic as well as the p/i interface layers. Parameters, as reliableas possible, are first obtained for all the intrinsic material gap states by detailed characterization of thin films and then further refined by self-consistent analysis of corresponding Schottky barrier cell characteristics. Results of solar cell simulations using these parameters are compared with those obtained from the default case in AMPS. Comparisons with experimental results are presentedwhich illustrate the large ambiguities when the commonly used approach is applied in the simulation of solar cell characterization.

Original language	American English
Pages	587-590
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654157
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

Work performed by Pennsylvania State University, University Park, Pennsylvania

NREL Publication Number

NREL/CP-520-24978

Access to Document

10.1109/PVSC.1997.654157

Cite this

@conference{87d5d60270324964966a4d66b400026d,

title = "Approach to Selfconsistent Analysis of a-Si:H Material and P-I-N Solar Cell Properties",

abstract = "Results are presented and discussed for an approach to a self-consistent analysis of a-Si:H based p-i-n solar cells. This approach addresses uncertainties present in commonly made simulations which are based solely on the neutral dangling bond densities with 'arbitrary' adjustments in the parameters for the gap states in the intrinsic as well as the p/i interface layers. Parameters, as reliableas possible, are first obtained for all the intrinsic material gap states by detailed characterization of thin films and then further refined by self-consistent analysis of corresponding Schottky barrier cell characteristics. Results of solar cell simulations using these parameters are compared with those obtained from the default case in AMPS. Comparisons with experimental results are presentedwhich illustrate the large ambiguities when the commonly used approach is applied in the simulation of solar cell characterization.",

author = "NREL",

note = "Work performed by Pennsylvania State University, University Park, Pennsylvania; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654157",

language = "American English",

pages = "587--590",

}

TY - CONF

T1 - Approach to Selfconsistent Analysis of a-Si:H Material and P-I-N Solar Cell Properties

AU - NREL, null

N1 - Work performed by Pennsylvania State University, University Park, Pennsylvania

PY - 1997

Y1 - 1997

N2 - Results are presented and discussed for an approach to a self-consistent analysis of a-Si:H based p-i-n solar cells. This approach addresses uncertainties present in commonly made simulations which are based solely on the neutral dangling bond densities with 'arbitrary' adjustments in the parameters for the gap states in the intrinsic as well as the p/i interface layers. Parameters, as reliableas possible, are first obtained for all the intrinsic material gap states by detailed characterization of thin films and then further refined by self-consistent analysis of corresponding Schottky barrier cell characteristics. Results of solar cell simulations using these parameters are compared with those obtained from the default case in AMPS. Comparisons with experimental results are presentedwhich illustrate the large ambiguities when the commonly used approach is applied in the simulation of solar cell characterization.

AB - Results are presented and discussed for an approach to a self-consistent analysis of a-Si:H based p-i-n solar cells. This approach addresses uncertainties present in commonly made simulations which are based solely on the neutral dangling bond densities with 'arbitrary' adjustments in the parameters for the gap states in the intrinsic as well as the p/i interface layers. Parameters, as reliableas possible, are first obtained for all the intrinsic material gap states by detailed characterization of thin films and then further refined by self-consistent analysis of corresponding Schottky barrier cell characteristics. Results of solar cell simulations using these parameters are compared with those obtained from the default case in AMPS. Comparisons with experimental results are presentedwhich illustrate the large ambiguities when the commonly used approach is applied in the simulation of solar cell characterization.

U2 - 10.1109/PVSC.1997.654157

DO - 10.1109/PVSC.1997.654157

M3 - Paper

SP - 587

EP - 590

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Approach to Selfconsistent Analysis of a-Si:H Material and P-I-N Solar Cell Properties

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this