Approach to Selfconsistent Analysis of a-Si:H Material and P-I-N Solar Cell Properties

Research output: Contribution to conferencePaper

Abstract

Results are presented and discussed for an approach to a self-consistent analysis of a-Si:H based p-i-n solar cells. This approach addresses uncertainties present in commonly made simulations which are based solely on the neutral dangling bond densities with 'arbitrary' adjustments in the parameters for the gap states in the intrinsic as well as the p/i interface layers. Parameters, as reliableas possible, are first obtained for all the intrinsic material gap states by detailed characterization of thin films and then further refined by self-consistent analysis of corresponding Schottky barrier cell characteristics. Results of solar cell simulations using these parameters are compared with those obtained from the default case in AMPS. Comparisons with experimental results are presentedwhich illustrate the large ambiguities when the commonly used approach is applied in the simulation of solar cell characterization.
Original languageAmerican English
Pages587-590
Number of pages4
DOIs
StatePublished - 1997
EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

Bibliographical note

Work performed by Pennsylvania State University, University Park, Pennsylvania

NREL Publication Number

  • NREL/CP-520-24978

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