@misc{34aa29e3001a4eeeaf9ebff0f9db636b,
title = "Approaches to Metallization for Poly-Si/SiOx Passivated Contacts",
abstract = "Recent improvements in Si solar cell efficiency beyond 25% have used doped poly-Si/SiOx or a-Si:H passivated contacts, the former culminating in a 25.7% cell with a n-poly-Si/SiOx rear contact 1 that is fundamentally compatible with screen printing and firing. However, metallization of the <100 nm thick stack is challenging and can limit open-circuit voltage (Voc) 2, 3. The goal of the work presented here is to develop metallization routes for poly-Si/SiOx passivated contacts with acceptable contact resistivity and minimized Voc loss. This is approached through incremental as well as disruptive improvements to metal evaporation. We examine all aspects of the poly-Si/SiOx process chain that can contribute to contact performance, including poly-Si/SiOx properties, passivation routes, capping layers, and metal deposition methods and post-treatments. We also discuss how to best quantify the contact resistivity that exists while operating a solar cell at maximum power point. Finally, we present two novel approaches to contacting poly-Si/SiOx - a thermally evaporated ITO interlayer, and a transparent conducting adhesive.",
keywords = "conducting adhesive, ITO, metallization, passivated contact, poly-Si",
author = "Manuel Schnabel and William Nemeth and San Theingi and Abhijit Kale and {Van Hest}, Marinus and David Young and Pauls Stradins and Talysa Klein and Benjamin Lee and Sumit Agarwal",
year = "2017",
language = "American English",
series = "Presented at the 7th Workshop on Metallization & Interconnection for Crystalline Silicon Solar Cells, 23-24 October 2017, Konstanz, Germany",
type = "Other",
}