Area-Dependent Switching in Thin Film-Silicon Devices

Jian Hu, Warren Jackson, Scott Ward, Pauls Stradins, Howard M. Branz, Qi Wang

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations


We report on the area dependence of switching in both Cr/p +a-Si:H/Ag(Al) and Cr/p+μc-Si/Ag(Al) filament switches. The doped amorphous (a-Si:H) or macrocrystalline (μc-Si) thin Si layers are made by hot-wire chemical vapor deposition. The device active region area (A) is varied over 5 orders of magnitude, from 10-7 to 10-2 cm2, using photo lithographically defined Ag and Al top contacts. Before switching, the resistance of 100-μm2 devices is normally about 100 kΩ for μc-Si and 10 GΩ for a-Si:H. After switching with applied current ramps, the resistance decreases to a few hundred ohms in all a-Si devices and to a few thousands ohms in μc-Si devices. In both μc-Si and a-Si:H devices, the switching voltage (V2) decreases with increasing device area according to Vsw ∼ V 0-αln(A/A0) with α=0.3V for a-Si:H and α=0.04V for μc-Si. For both materials, the switching current roughly obeys the power law Isw ∝ Aβ with β∼l. A statistical model is proposed to explain the area scaling of the switching voltage and relate the parameters to the material properties.

Original languageAmerican English
Number of pages6
StatePublished - 2003
EventMaterials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States
Duration: 22 Apr 200325 Apr 2003


ConferenceMaterials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003
Country/TerritoryUnited States
CitySan Francisco, CA

NREL Publication Number

  • NREL/CP-520-34154


Dive into the research topics of 'Area-Dependent Switching in Thin Film-Silicon Devices'. Together they form a unique fingerprint.

Cite this