Area-Dependent Switching in Thin Film-Silicon Devices

Jian Hu; Warren Jackson; Scott Ward; Pauls Stradins; Howard M. Branz; Qi Wang

doi:10.1557/proc-762-a18.3

Area-Dependent Switching in Thin Film-Silicon Devices

Jian Hu, Warren Jackson, Scott Ward, Pauls Stradins, Howard M. Branz, Qi Wang

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We report on the area dependence of switching in both Cr/p ⁺a-Si:H/Ag(Al) and Cr/p⁺μc-Si/Ag(Al) filament switches. The doped amorphous (a-Si:H) or macrocrystalline (μc-Si) thin Si layers are made by hot-wire chemical vapor deposition. The device active region area (A) is varied over 5 orders of magnitude, from 10^-7 to 10^-2 cm², using photo lithographically defined Ag and Al top contacts. Before switching, the resistance of 100-μm² devices is normally about 100 kΩ for μc-Si and 10 GΩ for a-Si:H. After switching with applied current ramps, the resistance decreases to a few hundred ohms in all a-Si devices and to a few thousands ohms in μc-Si devices. In both μc-Si and a-Si:H devices, the switching voltage (V₂) decreases with increasing device area according to V_sw ∼ V ₀-αln(A/A₀) with α=0.3V for a-Si:H and α=0.04V for μc-Si. For both materials, the switching current roughly obeys the power law I_sw ∝ A^β with β∼l. A statistical model is proposed to explain the area scaling of the switching voltage and relate the parameters to the material properties.

Original language	American English
Pages	157-162
Number of pages	6
DOIs	https://doi.org/10.1557/proc-762-a18.3
State	Published - 2003
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003
Country/Territory	United States
City	San Francisco, CA
Period	22/04/03 → 25/04/03

NREL Publication Number

NREL/CP-520-34154

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10.1557/proc-762-a18.3

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title = "Area-Dependent Switching in Thin Film-Silicon Devices",

abstract = "We report on the area dependence of switching in both Cr/p +a-Si:H/Ag(Al) and Cr/p+μc-Si/Ag(Al) filament switches. The doped amorphous (a-Si:H) or macrocrystalline (μc-Si) thin Si layers are made by hot-wire chemical vapor deposition. The device active region area (A) is varied over 5 orders of magnitude, from 10-7 to 10-2 cm2, using photo lithographically defined Ag and Al top contacts. Before switching, the resistance of 100-μm2 devices is normally about 100 kΩ for μc-Si and 10 GΩ for a-Si:H. After switching with applied current ramps, the resistance decreases to a few hundred ohms in all a-Si devices and to a few thousands ohms in μc-Si devices. In both μc-Si and a-Si:H devices, the switching voltage (V2) decreases with increasing device area according to Vsw ∼ V 0-αln(A/A0) with α=0.3V for a-Si:H and α=0.04V for μc-Si. For both materials, the switching current roughly obeys the power law Isw ∝ Aβ with β∼l. A statistical model is proposed to explain the area scaling of the switching voltage and relate the parameters to the material properties.",

author = "Jian Hu and Warren Jackson and Scott Ward and Pauls Stradins and Branz, {Howard M.} and Qi Wang",

year = "2003",

doi = "10.1557/proc-762-a18.3",

language = "American English",

pages = "157--162",

note = "Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",

}

TY - CONF

T1 - Area-Dependent Switching in Thin Film-Silicon Devices

AU - Hu, Jian

AU - Jackson, Warren

AU - Ward, Scott

AU - Stradins, Pauls

AU - Branz, Howard M.

AU - Wang, Qi

PY - 2003

Y1 - 2003

N2 - We report on the area dependence of switching in both Cr/p +a-Si:H/Ag(Al) and Cr/p+μc-Si/Ag(Al) filament switches. The doped amorphous (a-Si:H) or macrocrystalline (μc-Si) thin Si layers are made by hot-wire chemical vapor deposition. The device active region area (A) is varied over 5 orders of magnitude, from 10-7 to 10-2 cm2, using photo lithographically defined Ag and Al top contacts. Before switching, the resistance of 100-μm2 devices is normally about 100 kΩ for μc-Si and 10 GΩ for a-Si:H. After switching with applied current ramps, the resistance decreases to a few hundred ohms in all a-Si devices and to a few thousands ohms in μc-Si devices. In both μc-Si and a-Si:H devices, the switching voltage (V2) decreases with increasing device area according to Vsw ∼ V 0-αln(A/A0) with α=0.3V for a-Si:H and α=0.04V for μc-Si. For both materials, the switching current roughly obeys the power law Isw ∝ Aβ with β∼l. A statistical model is proposed to explain the area scaling of the switching voltage and relate the parameters to the material properties.

AB - We report on the area dependence of switching in both Cr/p +a-Si:H/Ag(Al) and Cr/p+μc-Si/Ag(Al) filament switches. The doped amorphous (a-Si:H) or macrocrystalline (μc-Si) thin Si layers are made by hot-wire chemical vapor deposition. The device active region area (A) is varied over 5 orders of magnitude, from 10-7 to 10-2 cm2, using photo lithographically defined Ag and Al top contacts. Before switching, the resistance of 100-μm2 devices is normally about 100 kΩ for μc-Si and 10 GΩ for a-Si:H. After switching with applied current ramps, the resistance decreases to a few hundred ohms in all a-Si devices and to a few thousands ohms in μc-Si devices. In both μc-Si and a-Si:H devices, the switching voltage (V2) decreases with increasing device area according to Vsw ∼ V 0-αln(A/A0) with α=0.3V for a-Si:H and α=0.04V for μc-Si. For both materials, the switching current roughly obeys the power law Isw ∝ Aβ with β∼l. A statistical model is proposed to explain the area scaling of the switching voltage and relate the parameters to the material properties.

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U2 - 10.1557/proc-762-a18.3

DO - 10.1557/proc-762-a18.3

M3 - Paper

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SP - 157

EP - 162

T2 - Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003

Y2 - 22 April 2003 through 25 April 2003

ER -

Area-Dependent Switching in Thin Film-Silicon Devices

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