Argon Ion Beam and Electron Beam-Induced Damage in Cu(In,Ga)Se2 Thin Films

Yanfa Yan; K. M. Jones; R. Noufi; M. M. Al-Jassim

doi:10.1016/j.tsf.2006.11.021

Argon Ion Beam and Electron Beam-Induced Damage in Cu(In,Ga)Se2 Thin Films

Yanfa Yan, K. M. Jones, R. Noufi, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

11 Scopus Citations

Abstract

Ar ion beam and electron beam-induced damages in Cu(In,Ga)Se₂ thin films are investigated by transmission electron microscopy and X-ray energy-dispersive spectroscopy. We find that a high-energy Ar ion beam can cause severe damage in Cu(In,Ga)Se₂ surface regions by preferentially depleting Se and In. The depletion can occur with an Ar ion beam at energy as low as 0.5 keV. High-energy electron beams also cause damage in Cu(In,Ga)Se₂ thin films by preferentially depleting In and Ga. Our results imply that special care must be taken for measurements involving surface treatments using high-energy Ar ion beams or electron beams.

Original language	American English
Pages (from-to)	4681-4685
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2006.11.021 https://doi.org/10.1016/j.tsf.2006.11.021
State	Published - 2007

NREL Publication Number

NREL/JA-520-39469

Keywords

CIGS
Electron beam
Ion beam damage
TEM

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title = "Argon Ion Beam and Electron Beam-Induced Damage in Cu(In,Ga)Se2 Thin Films",

abstract = "Ar ion beam and electron beam-induced damages in Cu(In,Ga)Se2 thin films are investigated by transmission electron microscopy and X-ray energy-dispersive spectroscopy. We find that a high-energy Ar ion beam can cause severe damage in Cu(In,Ga)Se2 surface regions by preferentially depleting Se and In. The depletion can occur with an Ar ion beam at energy as low as 0.5 keV. High-energy electron beams also cause damage in Cu(In,Ga)Se2 thin films by preferentially depleting In and Ga. Our results imply that special care must be taken for measurements involving surface treatments using high-energy Ar ion beams or electron beams.",

keywords = "CIGS, Electron beam, Ion beam damage, TEM",

author = "Yanfa Yan and Jones, {K. M.} and R. Noufi and Al-Jassim, {M. M.}",

year = "2007",

doi = "10.1016/j.tsf.2006.11.021",

language = "American English",

volume = "515",

pages = "4681--4685",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "11",

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TY - JOUR

T1 - Argon Ion Beam and Electron Beam-Induced Damage in Cu(In,Ga)Se2 Thin Films

AU - Yan, Yanfa

AU - Jones, K. M.

AU - Noufi, R.

AU - Al-Jassim, M. M.

PY - 2007

Y1 - 2007

N2 - Ar ion beam and electron beam-induced damages in Cu(In,Ga)Se2 thin films are investigated by transmission electron microscopy and X-ray energy-dispersive spectroscopy. We find that a high-energy Ar ion beam can cause severe damage in Cu(In,Ga)Se2 surface regions by preferentially depleting Se and In. The depletion can occur with an Ar ion beam at energy as low as 0.5 keV. High-energy electron beams also cause damage in Cu(In,Ga)Se2 thin films by preferentially depleting In and Ga. Our results imply that special care must be taken for measurements involving surface treatments using high-energy Ar ion beams or electron beams.

AB - Ar ion beam and electron beam-induced damages in Cu(In,Ga)Se2 thin films are investigated by transmission electron microscopy and X-ray energy-dispersive spectroscopy. We find that a high-energy Ar ion beam can cause severe damage in Cu(In,Ga)Se2 surface regions by preferentially depleting Se and In. The depletion can occur with an Ar ion beam at energy as low as 0.5 keV. High-energy electron beams also cause damage in Cu(In,Ga)Se2 thin films by preferentially depleting In and Ga. Our results imply that special care must be taken for measurements involving surface treatments using high-energy Ar ion beams or electron beams.

KW - CIGS

KW - Electron beam

KW - Ion beam damage

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=33847131963&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.11.021

DO - 10.1016/j.tsf.2006.11.021

M3 - Article

AN - SCOPUS:33847131963

SN - 0040-6090

VL - 515

SP - 4681

EP - 4685

JO - Thin Solid Films

JF - Thin Solid Films

IS - 11

ER -

Argon Ion Beam and Electron Beam-Induced Damage in Cu(In,Ga)Se2 Thin Films

Abstract

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Keywords

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