Arsenic Doped Cd-Rich CdTe: Equilibrium Doping Limit and Long Lifetime for High Open-Circuit Voltage Solar Cells Greater Than 900 mV

Darius Kuciauskas; Akira Nagaoka; Kensuke Nishioka; Kenji Yoshino; Michael Scarpulla

doi:10.7567/1882-0786/ab27fb

Arsenic Doped Cd-Rich CdTe: Equilibrium Doping Limit and Long Lifetime for High Open-Circuit Voltage Solar Cells Greater Than 900 mV

Darius Kuciauskas, Akira Nagaoka, Kensuke Nishioka, Kenji Yoshino, Michael Scarpulla

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 10¹⁷ cm^-3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 10¹⁶ cm^-3, yet we also demonstrate CdTe with >10¹⁷ cm^-3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

Original language	American English
Article number	081002
Number of pages	5
Journal	Applied Physics Express
Volume	12
Issue number	8
DOIs	https://doi.org/10.7567/1882-0786/ab27fb https://doi.org/10.7567/1882-0786/ab27fb
State	Published - 2019

Bibliographical note

Publisher Copyright:
© 2019 The Japan Society of Applied Physics.

NREL Publication Number

NREL/JA-5900-74157

Keywords

open-circuit voltage
power conversion efficiency
thin film CdTe photovoltaic devices

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@article{bb6a65f5c55147008796964809f58f11,

title = "Arsenic Doped Cd-Rich CdTe: Equilibrium Doping Limit and Long Lifetime for High Open-Circuit Voltage Solar Cells Greater Than 900 mV",

abstract = "The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm-3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm-3, yet we also demonstrate CdTe with >1017 cm-3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.",

keywords = "open-circuit voltage, power conversion efficiency, thin film CdTe photovoltaic devices",

author = "Darius Kuciauskas and Akira Nagaoka and Kensuke Nishioka and Kenji Yoshino and Michael Scarpulla",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

year = "2019",

doi = "10.7567/1882-0786/ab27fb",

language = "American English",

volume = "12",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - Arsenic Doped Cd-Rich CdTe: Equilibrium Doping Limit and Long Lifetime for High Open-Circuit Voltage Solar Cells Greater Than 900 mV

AU - Kuciauskas, Darius

AU - Nagaoka, Akira

AU - Nishioka, Kensuke

AU - Yoshino, Kenji

AU - Scarpulla, Michael

PY - 2019

Y1 - 2019

N2 - The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm-3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm-3, yet we also demonstrate CdTe with >1017 cm-3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

AB - The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm-3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm-3, yet we also demonstrate CdTe with >1017 cm-3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

KW - open-circuit voltage

KW - power conversion efficiency

KW - thin film CdTe photovoltaic devices

UR - http://www.scopus.com/inward/record.url?scp=85071415937&partnerID=8YFLogxK

U2 - 10.7567/1882-0786/ab27fb

DO - 10.7567/1882-0786/ab27fb

M3 - Article

AN - SCOPUS:85071415937

SN - 1882-0778

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

IS - 8

M1 - 081002

ER -

Arsenic Doped Cd-Rich CdTe: Equilibrium Doping Limit and Long Lifetime for High Open-Circuit Voltage Solar Cells Greater Than 900 mV

Abstract

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NREL Publication Number

Keywords

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