Arsenic-Doped p-CdTe Layers Grown by Organometallic Vapor Phase Epitaxy

Research output: Contribution to journal › Article

Work performed by Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York

NLR Publication Number

@article{fbb97ed294824dfab49ba58a7470c3fc,

title = "Arsenic-Doped p-CdTe Layers Grown by Organometallic Vapor Phase Epitaxy",

author = "NREL",

note = "Work performed by Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York",

year = "1987",

doi = "10.1063/1.98027",

language = "American English",

volume = "50",

pages = "900--902",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Arsenic-Doped p-CdTe Layers Grown by Organometallic Vapor Phase Epitaxy

AU - NREL, null

N1 - Work performed by Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York

PY - 1987

Y1 - 1987

U2 - 10.1063/1.98027

DO - 10.1063/1.98027

M3 - Article

SN - 0003-6951

VL - 50

SP - 900

EP - 902

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -