Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells

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NLR Publication Number

@article{273d5decf2aa4b38bbd355714f428344,

title = "Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells",

author = "Yun Lee and Danny Chua and Riley Brandt and Sin Siah and Jonathan Mailoa and Sang Lee and Roy Gordon and Tonio Buonassisi",

year = "2014",

doi = "10.1002/adma.201401054",

language = "American English",

volume = "26",

pages = "4704--4710",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "27",

}

TY - JOUR

T1 - Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells

AU - Lee, Yun

AU - Chua, Danny

AU - Brandt, Riley

AU - Siah, Sin

AU - Mailoa, Jonathan

AU - Lee, Sang

AU - Gordon, Roy

AU - Buonassisi, Tonio

PY - 2014

Y1 - 2014

U2 - 10.1002/adma.201401054

DO - 10.1002/adma.201401054

M3 - Article

SN - 0935-9648

VL - 26

SP - 4704

EP - 4710

JO - Advanced Materials

JF - Advanced Materials

IS - 27

ER -