Atomic-Level Imaging, Processing and Characterization of Defects and Surfaces using Proximal Probe Techniques

A new proximal probe technique is introduced for the manipulation and placement of atoms at specific sites on semiconductor surfaces. This study reports the effects of removing single intrinsic atoms and placing extrinsic atoms at predetermined sites at grain boundaries in CuInSe₂. The method uses coordinated electronic and wavelength-specific photon fields to reduce the effective tunneling barrier heights controlling the field evaporation process. A specially developed scanning tunnelling microscope (STM) tip is used for the confinement and direction of the extrinsic atomic species to the surface region. A proximal probe-based electrical characterization technique is used to evaluate and compare the minority-carrier characteristics in the vicinity of the defects before and after the atomic processing.