Atomic Ordering and Phase Separation in MBE GaAs1-xBix

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Abstract

Transmission electron microscopy studies of GaAs1?xBi x layers grown at low temperature by molecular beam epitaxy have revealed evidence of both atomic ordering and phase separation. In layers containing up to ∼10% Bi, the two variants of CuPtB-type atomic ordering on { 111 } B planes were observed and this is believed to be associated with the surface reconstruction present during growth. In a sample containing ∼13% Bi, no atomic ordering was observed but instead an anisotropic platelike structure was present that is believed to result from phase separation, possibly associated with the surface segregation of excess Bi during growth. Both of these effects are expected to have significant effects on the electrical and optical properties of the material.

Original languageAmerican English
Article number03C121
Number of pages5
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume29
Issue number3
DOIs
StatePublished - May 2011

NREL Publication Number

  • NREL/JA-5200-50583

Keywords

  • molecular beam epitaxy
  • phase separation

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