Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As

S. P. Ahrenkiel; S. W. Johnston; R. K. Ahrenkiel; D. J. Arent; M. C. Hanna; M. W. Wanlass

doi:10.1063/1.124152

Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As

S. P. Ahrenkiel, S. W. Johnston, R. K. Ahrenkiel, D. J. Arent, M. C. Hanna, M. W. Wanlass

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

8 Scopus Citations

Abstract

Influences of CuPt_B atomic ordering on transient photoconductivity in epitaxial Ga_0.47In_0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30-60 μs, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double-and single-variant samples may be influenced by inhibited transport across antiphase boundaries.

Original language	American English
Pages (from-to)	3534-3536
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	23
DOIs	https://doi.org/10.1063/1.124152 https://doi.org/10.1063/1.124152
State	Published - 1999

NREL Publication Number

NREL/JA-520-25934

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@article{862771b289784b4e99b8e87e35e24dcf,

title = "Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As",

abstract = "Influences of CuPtB atomic ordering on transient photoconductivity in epitaxial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30-60 μs, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double-and single-variant samples may be influenced by inhibited transport across antiphase boundaries.",

author = "Ahrenkiel, {S. P.} and Johnston, {S. W.} and Ahrenkiel, {R. K.} and Arent, {D. J.} and Hanna, {M. C.} and Wanlass, {M. W.}",

year = "1999",

doi = "10.1063/1.124152",

language = "American English",

volume = "74",

pages = "3534--3536",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As

AU - Ahrenkiel, S. P.

AU - Johnston, S. W.

AU - Ahrenkiel, R. K.

AU - Arent, D. J.

AU - Hanna, M. C.

AU - Wanlass, M. W.

PY - 1999

Y1 - 1999

N2 - Influences of CuPtB atomic ordering on transient photoconductivity in epitaxial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30-60 μs, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double-and single-variant samples may be influenced by inhibited transport across antiphase boundaries.

AB - Influences of CuPtB atomic ordering on transient photoconductivity in epitaxial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30-60 μs, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double-and single-variant samples may be influenced by inhibited transport across antiphase boundaries.

UR - http://www.scopus.com/inward/record.url?scp=0042878786&partnerID=8YFLogxK

U2 - 10.1063/1.124152

DO - 10.1063/1.124152

M3 - Article

AN - SCOPUS:0042878786

SN - 0003-6951

VL - 74

SP - 3534

EP - 3536

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As

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