Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As

S. P. Ahrenkiel, S. W. Johnston, R. K. Ahrenkiel, D. J. Arent, M. C. Hanna, M. W. Wanlass

Research output: Contribution to journalArticlepeer-review

8 Scopus Citations


Influences of CuPtB atomic ordering on transient photoconductivity in epitaxial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30-60 μs, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double-and single-variant samples may be influenced by inhibited transport across antiphase boundaries.

Original languageAmerican English
Pages (from-to)3534-3536
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - 1999

NREL Publication Number

  • NREL/JA-520-25934


Dive into the research topics of 'Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As'. Together they form a unique fingerprint.

Cite this