Atomic Ordering-Induced Band Gap Reductions in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

B. P. Gorman; A. G. Norman; R. Lukic-Zrnic; C. L. Littler; H. R. Moutinho; T. D. Golding; A. G. Birdwell

doi:10.1063/1.1834983

Atomic Ordering-Induced Band Gap Reductions in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

B. P. Gorman, A. G. Norman, R. Lukic-Zrnic, C. L. Littler, H. R. Moutinho, T. D. Golding, A. G. Birdwell

Materials Science

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

A series of Ga As1-x Sbx epilayers (0.51<x<0.71) grown by molecular-beam epitaxy on GaAs substrates with surface orientations of (001), (001) -8° toward (111) A, (001) -8° toward (111) B, (115) A, (115) B, (113) A, and (113) B were investigated using temperature-dependent Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by FTIR absorption and corroborated by superlattice reflections in electron diffraction. Contrary to previous investigations of ordering in III-V alloys, a marked energy-gap reduction, corresponding to CuPt- B -type ordering, is observed in the Ga As1-x Sbx grown on (111) A -type substrate offcuts.

Original language	American English
Article number	063701
Number of pages	7
Journal	Journal of Applied Physics
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.1834983 https://doi.org/10.1063/1.1834983
State	Published - 2005

NREL Publication Number

NREL/JA-520-38383

Access to Document

Cite this

@article{997bf51473f04db4b413eec6dc0f0df6,

title = "Atomic Ordering-Induced Band Gap Reductions in GaAsSb Epilayers Grown by Molecular Beam Epitaxy",

abstract = "A series of Ga As1-x Sbx epilayers (0.51",

author = "Gorman, {B. P.} and Norman, {A. G.} and R. Lukic-Zrnic and Littler, {C. L.} and Moutinho, {H. R.} and Golding, {T. D.} and Birdwell, {A. G.}",

year = "2005",

doi = "10.1063/1.1834983",

language = "American English",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Atomic Ordering-Induced Band Gap Reductions in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

AU - Gorman, B. P.

AU - Norman, A. G.

AU - Lukic-Zrnic, R.

AU - Littler, C. L.

AU - Moutinho, H. R.

AU - Golding, T. D.

AU - Birdwell, A. G.

PY - 2005

Y1 - 2005

N2 - A series of Ga As1-x Sbx epilayers (0.51

AB - A series of Ga As1-x Sbx epilayers (0.51

UR - http://www.scopus.com/inward/record.url?scp=20444497693&partnerID=8YFLogxK

U2 - 10.1063/1.1834983

DO - 10.1063/1.1834983

M3 - Article

AN - SCOPUS:20444497693

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063701

ER -

Atomic Ordering-Induced Band Gap Reductions in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this