Abstract
A series of Ga As1-x Sbx epilayers (0.51<x<0.71) grown by molecular-beam epitaxy on GaAs substrates with surface orientations of (001), (001) -8° toward (111) A, (001) -8° toward (111) B, (115) A, (115) B, (113) A, and (113) B were investigated using temperature-dependent Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by FTIR absorption and corroborated by superlattice reflections in electron diffraction. Contrary to previous investigations of ordering in III-V alloys, a marked energy-gap reduction, corresponding to CuPt- B -type ordering, is observed in the Ga As1-x Sbx grown on (111) A -type substrate offcuts.
Original language | American English |
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Article number | 063701 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 97 |
Issue number | 6 |
DOIs | |
State | Published - 2005 |
NREL Publication Number
- NREL/JA-520-38383