Abstract
Scanning tunneling microscope images of arsenic-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call “single-row” (SR) steps and “double-row” (DR) steps. By changing the sample preparation conditions, we are able to consistently change the ratio of SR/DR steps. In other words, we have observed a structural phase transition in the reconstruction of As/Ge steps at atomic resolution.
Original language | American English |
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Pages (from-to) | 15999-16005 |
Number of pages | 7 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 60 |
Issue number | 23 |
DOIs | |
State | Published - 1999 |
NREL Publication Number
- NREL/JA-520-26819