Atomic-Resolution Z-Contrast Imaging and Its Application to Compositional Ordering and Segregation

S. J. Pennycook, Y. Yan, A. Norman, Y. Zhang, M. Al-Jassim, A. Mascarenhas, S. P. Ahrenkiel, M. F. Chisholm, G. Duscher, S. T. Pantelides

Research output: Contribution to conferencePaperpeer-review


The Z-contrast microscopy technique can be used to study compositional ordering and segregation at the atomic scale. This article discusses three examples of ordering: ferroelectric materials; III-V semiconductor alloys; and cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.

Original languageAmerican English
Number of pages8
StatePublished - 2000
Externally publishedYes
EventSelf-Organized Processes in Semiconductor Alloys - Boston, MA, USA
Duration: 29 Nov 19992 Dec 1999


ConferenceSelf-Organized Processes in Semiconductor Alloys
CityBoston, MA, USA

NREL Publication Number

  • NREL/CP-590-29973


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