Abstract
The Z-contrast microscopy technique can be used to study compositional ordering and segregation at the atomic scale. This article discusses three examples of ordering: ferroelectric materials; III-V semiconductor alloys; and cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.
| Original language | American English |
|---|---|
| Pages | 235-242 |
| Number of pages | 8 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Self-Organized Processes in Semiconductor Alloys - Boston, MA, USA Duration: 29 Nov 1999 → 2 Dec 1999 |
Conference
| Conference | Self-Organized Processes in Semiconductor Alloys |
|---|---|
| City | Boston, MA, USA |
| Period | 29/11/99 → 2/12/99 |
NREL Publication Number
- NREL/CP-590-29973