Atomic-Scale Origin of Emission from Extended Defects in mc-Si

Harvey Guthrey; Steve Johnston; Brian Gorman; Mowafak Al-Jassim

doi:10.1109/PVSC.2013.6745015

Atomic-Scale Origin of Emission from Extended Defects in mc-Si

Harvey Guthrey, Steve Johnston, Brian Gorman, Mowafak Al-Jassim

Materials Science

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

Abstract

Defect luminescence in mc-Si has been extensively studied in the decades since it was first identified. The origin has been probed by the techniques of photoluminescence, cathodoluminescence, and by theoretical investigations. Due to detection limits and resolution inadequacies of these techniques a definitive explanation of defect luminescence phenomena has not yet been provided to the silicon PV community. This work combines the traditionally used techniques with a suite of atomic-scale characterization methods to probe the origins of defect luminescence in mc-Si PV material at the atomic level. High resolution transmission electron microscopy and laser-pulsed atom probe tomography provide the structural and chemical information necessary to provide definitive evidence of the origin of defect luminescence in mc-Si.

Original language	American English
Pages	2637-2640
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2013.6745015 https://doi.org/10.1109/PVSC.2013.6745015
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

NREL Publication Number

NREL/CP-5200-57896

Keywords

Atom probe
Characterization
Crystalline silicon
Defect luminescence
Defects

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title = "Atomic-Scale Origin of Emission from Extended Defects in mc-Si",

abstract = "Defect luminescence in mc-Si has been extensively studied in the decades since it was first identified. The origin has been probed by the techniques of photoluminescence, cathodoluminescence, and by theoretical investigations. Due to detection limits and resolution inadequacies of these techniques a definitive explanation of defect luminescence phenomena has not yet been provided to the silicon PV community. This work combines the traditionally used techniques with a suite of atomic-scale characterization methods to probe the origins of defect luminescence in mc-Si PV material at the atomic level. High resolution transmission electron microscopy and laser-pulsed atom probe tomography provide the structural and chemical information necessary to provide definitive evidence of the origin of defect luminescence in mc-Si.",

keywords = "Atom probe, Characterization, Crystalline silicon, Defect luminescence, Defects",

author = "Harvey Guthrey and Steve Johnston and Brian Gorman and Mowafak Al-Jassim",

year = "2013",

doi = "10.1109/PVSC.2013.6745015",

language = "American English",

pages = "2637--2640",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

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TY - CONF

T1 - Atomic-Scale Origin of Emission from Extended Defects in mc-Si

AU - Guthrey, Harvey

AU - Johnston, Steve

AU - Gorman, Brian

AU - Al-Jassim, Mowafak

PY - 2013

Y1 - 2013

N2 - Defect luminescence in mc-Si has been extensively studied in the decades since it was first identified. The origin has been probed by the techniques of photoluminescence, cathodoluminescence, and by theoretical investigations. Due to detection limits and resolution inadequacies of these techniques a definitive explanation of defect luminescence phenomena has not yet been provided to the silicon PV community. This work combines the traditionally used techniques with a suite of atomic-scale characterization methods to probe the origins of defect luminescence in mc-Si PV material at the atomic level. High resolution transmission electron microscopy and laser-pulsed atom probe tomography provide the structural and chemical information necessary to provide definitive evidence of the origin of defect luminescence in mc-Si.

AB - Defect luminescence in mc-Si has been extensively studied in the decades since it was first identified. The origin has been probed by the techniques of photoluminescence, cathodoluminescence, and by theoretical investigations. Due to detection limits and resolution inadequacies of these techniques a definitive explanation of defect luminescence phenomena has not yet been provided to the silicon PV community. This work combines the traditionally used techniques with a suite of atomic-scale characterization methods to probe the origins of defect luminescence in mc-Si PV material at the atomic level. High resolution transmission electron microscopy and laser-pulsed atom probe tomography provide the structural and chemical information necessary to provide definitive evidence of the origin of defect luminescence in mc-Si.

KW - Atom probe

KW - Characterization

KW - Crystalline silicon

KW - Defect luminescence

KW - Defects

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U2 - 10.1109/PVSC.2013.6745015

DO - 10.1109/PVSC.2013.6745015

M3 - Paper

AN - SCOPUS:84896465380

SP - 2637

EP - 2640

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Atomic-Scale Origin of Emission from Extended Defects in mc-Si

Abstract

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Keywords

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