Atomic Scale Study of Polar Lomer-Cottrell and Hirth Lock Dislocation Cores in CdTe

Engineering

• Dislocation Core 100%
• Semiconductor Device 66%
• Rod 66%
• Elastic Energy 66%
• Transmissions 33%
• Nanometre 33%
• Hot Spot 33%
• Scale Analysis 33%
• Strain Field 33%
• Strain Hardening 33%
• Dislocation Junction 33%
• Phase Analysis 33%
• Mobile Dislocation 33%

Material Science

• Semiconductor Device 100%
• Electronic Circuit 50%
• Work Hardening 50%
• Dislocation Junction 50%