Abstract
The atomic structure and electronic properties of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) interfaces in silicon heterojunction (SHJ) solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy loss spectroscopy. We find that all high-performance SHJ solar cells exhibit atomically abrupt andflat c-Si/a-Si:H interfaces and high disorder of the a-Si:H layers. These atomically abrupt and flat c-Si/a-Si:H interfaces can be realized by direct deposition of a-Si:H on c-Si substrates at a substrate temperature below 150 deg C by hot-wire chemical vapor deposition from pure silane.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 7 Nov 2005 → 10 Nov 2005 |
Conference
| Conference | 2005 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 7/11/05 → 10/11/05 |
Bibliographical note
Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)NREL Publication Number
- NREL/CP-520-38935
Keywords
- heterojunctions
- NREL
- photovoltaics (PV)
- PV
- solar
- solar cells