Auger Analysis of Si-H Bonding and Hydrogen Concentration in Hydrogenated Amorphous Silicon

A. J. Nelson; N. A. Burnham; A. B. Schwartzlander; S. E. Asher; L. L. Kazmerski

doi:10.1116/1.573509

Auger Analysis of Si-H Bonding and Hydrogen Concentration in Hydrogenated Amorphous Silicon

A. J. Nelson, N. A. Burnham, A. B. Schwartzlander, S. E. Asher, L. L. Kazmerski

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

10 Scopus Citations

Abstract

Auger electron spectroscopy line-shape analysis of the Si-L₂₃VV peak has been performed on hydrogenated amorphous silicon (a-Si:H). Both a-Si:H produced by hydrogen implantation of silicon single crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 10¹⁶‑10²²cm^-3were evaluated. Correlations between the area under the deconvoluted L₂₃VV transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using Auger analysis. The percentage of the L₂₃M_XM₂₃(sp) transition relative to the L₂₃M₂₃M₂₃(pp) transition has been determined and also correlated with the hydrogen concentrations. These results have been compared with previously published theoretical calculations.

Original language	American English
Pages (from-to)	1570-1573
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	4
Issue number	3
DOIs	https://doi.org/10.1116/1.573509 https://doi.org/10.1116/1.573509
State	Published - 1986

NREL Publication Number

ACNR/JA-213-8110

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abstract = "Auger electron spectroscopy line-shape analysis of the Si-L23VV peak has been performed on hydrogenated amorphous silicon (a-Si:H). Both a-Si:H produced by hydrogen implantation of silicon single crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 1016‑1022cm-3were evaluated. Correlations between the area under the deconvoluted L23VV transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using Auger analysis. The percentage of the L23MXM23(sp) transition relative to the L23M23M23(pp) transition has been determined and also correlated with the hydrogen concentrations. These results have been compared with previously published theoretical calculations.",

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AU - Nelson, A. J.

AU - Burnham, N. A.

AU - Schwartzlander, A. B.

AU - Asher, S. E.

AU - Kazmerski, L. L.

PY - 1986

Y1 - 1986

N2 - Auger electron spectroscopy line-shape analysis of the Si-L23VV peak has been performed on hydrogenated amorphous silicon (a-Si:H). Both a-Si:H produced by hydrogen implantation of silicon single crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 1016‑1022cm-3were evaluated. Correlations between the area under the deconvoluted L23VV transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using Auger analysis. The percentage of the L23MXM23(sp) transition relative to the L23M23M23(pp) transition has been determined and also correlated with the hydrogen concentrations. These results have been compared with previously published theoretical calculations.

AB - Auger electron spectroscopy line-shape analysis of the Si-L23VV peak has been performed on hydrogenated amorphous silicon (a-Si:H). Both a-Si:H produced by hydrogen implantation of silicon single crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 1016‑1022cm-3were evaluated. Correlations between the area under the deconvoluted L23VV transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using Auger analysis. The percentage of the L23MXM23(sp) transition relative to the L23M23M23(pp) transition has been determined and also correlated with the hydrogen concentrations. These results have been compared with previously published theoretical calculations.

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Auger Analysis of Si-H Bonding and Hydrogen Concentration in Hydrogenated Amorphous Silicon

Abstract

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