Auger Analysis of Si-H Bonding and Hydrogen Concentration in Hydrogenated Amorphous Silicon

A. J. Nelson, N. A. Burnham, A. B. Schwartzlander, S. E. Asher, L. L. Kazmerski

Research output: Contribution to journalArticlepeer-review

10 Scopus Citations


Auger electron spectroscopy line-shape analysis of the Si-L23VV peak has been performed on hydrogenated amorphous silicon (a-Si:H). Both a-Si:H produced by hydrogen implantation of silicon single crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 1016‑1022cm-3were evaluated. Correlations between the area under the deconvoluted L23VV transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using Auger analysis. The percentage of the L23MXM23(sp) transition relative to the L23M23M23(pp) transition has been determined and also correlated with the hydrogen concentrations. These results have been compared with previously published theoretical calculations.

Original languageAmerican English
Pages (from-to)1570-1573
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - 1986

NREL Publication Number

  • ACNR/JA-213-8110


Dive into the research topics of 'Auger Analysis of Si-H Bonding and Hydrogen Concentration in Hydrogenated Amorphous Silicon'. Together they form a unique fingerprint.

Cite this