Auger Line Shape and Electron Energy Loss Spectroscopy Analysis of Amorphous, Microcrystalline, and B-SiC

A. J. Nelson; A. R. Mason; A. B. Swartzlander; L. L. Kazmerski

doi:10.1116/1.576761

Auger Line Shape and Electron Energy Loss Spectroscopy Analysis of Amorphous, Microcrystalline, and B-SiC

A. J. Nelson, A. R. Mason, A. B. Swartzlander, L. L. Kazmerski

Materials Science

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

Auger electron spectroscopy (AES) line shape analysis of the Si-L₂₃VV and C-KLL peaks has been performed in conjunction with electron energy loss spectroscopy (EELS) on Hg-sensitized photodeposited amorphous and microcyrstalline SiC films. Mixtures of SiH₄/CH₃SiH₃ and SiH₄/(CH₃)₂ SiH₂ with helium or hydrogen dilution were used for the depositions. AES line shape and EELS analyses were also performed on β-SiC for comparison. Quantitative bulk compositional analysis to determine the Si and C concentrations in these films was performed with an electron microprobe (EMPA) using x-ray wavelength dispersive spectroscopy (WDS). AES and EELS results reveal the predominant Si C bonding and relative crystallinity in the films as a function of deposition parameters, which includes the gas mixture, pressure, and H₂/He dilution. These parameters determine the H radical flux during growth, which leads to changes in the film structure.

Original language	American English
Pages (from-to)	1538-1543
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	8
Issue number	3
DOIs	https://doi.org/10.1116/1.576761 https://doi.org/10.1116/1.576761
State	Published - May 1990

Bibliographical note

Work performed by the Solar Energy Research Institute, Golden, Colorado, and the Institute of Energy Conversion, University of Delaware, Newark, Delaware

NREL Publication Number

ACNR/JA-213-11798

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title = "Auger Line Shape and Electron Energy Loss Spectroscopy Analysis of Amorphous, Microcrystalline, and B-SiC",

abstract = "Auger electron spectroscopy (AES) line shape analysis of the Si-L23VV and C-KLL peaks has been performed in conjunction with electron energy loss spectroscopy (EELS) on Hg-sensitized photodeposited amorphous and microcyrstalline SiC films. Mixtures of SiH4/CH3SiH3 and SiH4/(CH3)2 SiH2 with helium or hydrogen dilution were used for the depositions. AES line shape and EELS analyses were also performed on β-SiC for comparison. Quantitative bulk compositional analysis to determine the Si and C concentrations in these films was performed with an electron microprobe (EMPA) using x-ray wavelength dispersive spectroscopy (WDS). AES and EELS results reveal the predominant Si C bonding and relative crystallinity in the films as a function of deposition parameters, which includes the gas mixture, pressure, and H2/He dilution. These parameters determine the H radical flux during growth, which leads to changes in the film structure.",

author = "Nelson, {A. J.} and Mason, {A. R.} and Swartzlander, {A. B.} and Kazmerski, {L. L.}",

note = "Work performed by the Solar Energy Research Institute, Golden, Colorado, and the Institute of Energy Conversion, University of Delaware, Newark, Delaware",

year = "1990",

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AU - Nelson, A. J.

AU - Mason, A. R.

AU - Swartzlander, A. B.

AU - Kazmerski, L. L.

N1 - Work performed by the Solar Energy Research Institute, Golden, Colorado, and the Institute of Energy Conversion, University of Delaware, Newark, Delaware

PY - 1990/5

Y1 - 1990/5

N2 - Auger electron spectroscopy (AES) line shape analysis of the Si-L23VV and C-KLL peaks has been performed in conjunction with electron energy loss spectroscopy (EELS) on Hg-sensitized photodeposited amorphous and microcyrstalline SiC films. Mixtures of SiH4/CH3SiH3 and SiH4/(CH3)2 SiH2 with helium or hydrogen dilution were used for the depositions. AES line shape and EELS analyses were also performed on β-SiC for comparison. Quantitative bulk compositional analysis to determine the Si and C concentrations in these films was performed with an electron microprobe (EMPA) using x-ray wavelength dispersive spectroscopy (WDS). AES and EELS results reveal the predominant Si C bonding and relative crystallinity in the films as a function of deposition parameters, which includes the gas mixture, pressure, and H2/He dilution. These parameters determine the H radical flux during growth, which leads to changes in the film structure.

AB - Auger electron spectroscopy (AES) line shape analysis of the Si-L23VV and C-KLL peaks has been performed in conjunction with electron energy loss spectroscopy (EELS) on Hg-sensitized photodeposited amorphous and microcyrstalline SiC films. Mixtures of SiH4/CH3SiH3 and SiH4/(CH3)2 SiH2 with helium or hydrogen dilution were used for the depositions. AES line shape and EELS analyses were also performed on β-SiC for comparison. Quantitative bulk compositional analysis to determine the Si and C concentrations in these films was performed with an electron microprobe (EMPA) using x-ray wavelength dispersive spectroscopy (WDS). AES and EELS results reveal the predominant Si C bonding and relative crystallinity in the films as a function of deposition parameters, which includes the gas mixture, pressure, and H2/He dilution. These parameters determine the H radical flux during growth, which leads to changes in the film structure.

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ER -

Auger Line Shape and Electron Energy Loss Spectroscopy Analysis of Amorphous, Microcrystalline, and B-SiC

Abstract

Bibliographical note

NREL Publication Number

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