Auger Recombination in Heavily Carbon-Doped GaAs

R. K. Ahrenkiel, R. Ellingson, W. Metzger, D. I. Lubyshev, W. K. Liu

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations


The recombination parameters in heavily carbon-doped GaAs are of considerable importance to current bipolar transistor technology. Here, we used time-resolved photoluminescence and quantum-efficiency techniques in parallel to measure the very short lifetimes expected at high doping. The samples were isotype double heterostructures, with the structure Al(0.4)Ga(0.6)As/ GaAs/Al(0.4)Ga(0.6)As, grown by molecular-beam epitaxy. The doping level was varied from 5 X 1018 to 1 X 1020 cm-3 for the samples described here. For doping levels greater than 1 X 1019 cm-3, the lifetime decreased as the inverse of the cube of the hole density, indicating that phonon and impurity-assisted Auger processes are dominant.

Original languageAmerican English
Pages (from-to)1879-1881
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - 2001

NREL Publication Number

  • NREL/JA-520-28788


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