Auger Recombination in Heavily Carbon-Doped GaAs

R. K. Ahrenkiel; R. Ellingson; W. Metzger; D. I. Lubyshev; W. K. Liu

doi:10.1063/1.1357213

Auger Recombination in Heavily Carbon-Doped GaAs

R. K. Ahrenkiel, R. Ellingson, W. Metzger, D. I. Lubyshev, W. K. Liu

Materials Science

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14 Scopus Citations

Abstract

The recombination parameters in heavily carbon-doped GaAs are of considerable importance to current bipolar transistor technology. Here, we used time-resolved photoluminescence and quantum-efficiency techniques in parallel to measure the very short lifetimes expected at high doping. The samples were isotype double heterostructures, with the structure Al(0.4)Ga(0.6)As/ GaAs/Al(0.4)Ga(0.6)As, grown by molecular-beam epitaxy. The doping level was varied from 5 X 10¹⁸ to 1 X 10²⁰ cm^-3 for the samples described here. For doping levels greater than 1 X 10¹⁹ cm^-3, the lifetime decreased as the inverse of the cube of the hole density, indicating that phonon and impurity-assisted Auger processes are dominant.

Original language	American English
Pages (from-to)	1879-1881
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	13
DOIs	https://doi.org/10.1063/1.1357213 https://doi.org/10.1063/1.1357213
State	Published - 2001

NREL Publication Number

NREL/JA-520-28788

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abstract = "The recombination parameters in heavily carbon-doped GaAs are of considerable importance to current bipolar transistor technology. Here, we used time-resolved photoluminescence and quantum-efficiency techniques in parallel to measure the very short lifetimes expected at high doping. The samples were isotype double heterostructures, with the structure Al(0.4)Ga(0.6)As/ GaAs/Al(0.4)Ga(0.6)As, grown by molecular-beam epitaxy. The doping level was varied from 5 X 1018 to 1 X 1020 cm-3 for the samples described here. For doping levels greater than 1 X 1019 cm-3, the lifetime decreased as the inverse of the cube of the hole density, indicating that phonon and impurity-assisted Auger processes are dominant.",

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AU - Ahrenkiel, R. K.

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AU - Lubyshev, D. I.

AU - Liu, W. K.

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AB - The recombination parameters in heavily carbon-doped GaAs are of considerable importance to current bipolar transistor technology. Here, we used time-resolved photoluminescence and quantum-efficiency techniques in parallel to measure the very short lifetimes expected at high doping. The samples were isotype double heterostructures, with the structure Al(0.4)Ga(0.6)As/ GaAs/Al(0.4)Ga(0.6)As, grown by molecular-beam epitaxy. The doping level was varied from 5 X 1018 to 1 X 1020 cm-3 for the samples described here. For doping levels greater than 1 X 1019 cm-3, the lifetime decreased as the inverse of the cube of the hole density, indicating that phonon and impurity-assisted Auger processes are dominant.

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Auger Recombination in Heavily Carbon-Doped GaAs

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