Abstract
We measured the recombination lifetime of degenerate n-InxGa1-xAs for three different compositions that correspond to x = 0.53, 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of 3 × 1018-5 × 1019 carriers/cm3. The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination.
Original language | American English |
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Pages (from-to) | 3272-3274 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 20 |
DOIs | |
State | Published - 12 Nov 2001 |
NREL Publication Number
- NREL/JA-520-29640