Auger Recombination in Low-Bandgap n-Type InGaAs

W. K. Metzger, M. W. Wanlass, R. J. Ellingson, R. K. Ahrenkiel, J. J. Carapella

Research output: Contribution to journalArticlepeer-review

53 Scopus Citations

Abstract

We measured the recombination lifetime of degenerate n-InxGa1-xAs for three different compositions that correspond to x = 0.53, 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of 3 × 1018-5 × 1019 carriers/cm3. The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination.

Original languageAmerican English
Pages (from-to)3272-3274
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number20
DOIs
StatePublished - 12 Nov 2001

NREL Publication Number

  • NREL/JA-520-29640

Fingerprint

Dive into the research topics of 'Auger Recombination in Low-Bandgap n-Type InGaAs'. Together they form a unique fingerprint.

Cite this