Back Contact Effects on the Electro-Optical Properties of CdTe/CdS Solar Cells

Back Contact Effects on the Electro-Optical Properties of CdTe/CdS Solar Cells

NREL

Research output: Contribution to conference › Paper

Abstract

Studies of junction photoluminescence (PL) in CdTe/CdS solar cells reveal that back-contact application produces a dramatic qualitative change in the junction picosecond-PL spectrum. Prior to contact application, the spectrum has two peaks at energies of 1.501 eV and 1.457 eV, corresponding to recombination in regions of CdTeS alloy with 2% and 12% sulfur content, respectively. After contactapplication, the spectrum consists of a single broad peak at 1.48 eV. Previous studies have shown that the nitric-phosphoric (NP) etch used in the contact procedure produces a layer of elemental tellurium (Te) on the CdTe surface. We postulate that the change in the near-junction PL spectrum is caused by a grain-boundary field effect due to perturbations of the grain-boundary conductivity andFermi level.

Original language	American English
Number of pages	8
State	Published - 1998
Event	National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998

Conference

Conference	National Center for Photovoltaics Program Review Meeting
City	Denver, Colorado
Period	8/09/98 → 11/09/98

NLR Publication Number

NREL/CP-520-25684

Access to Document

https://www.nrel.gov/docs/fy99osti/25684.pdf

Cite this

@conference{4d0057003d87431e911ce1d828e78927,

title = "Back Contact Effects on the Electro-Optical Properties of CdTe/CdS Solar Cells",

abstract = "Studies of junction photoluminescence (PL) in CdTe/CdS solar cells reveal that back-contact application produces a dramatic qualitative change in the junction picosecond-PL spectrum. Prior to contact application, the spectrum has two peaks at energies of 1.501 eV and 1.457 eV, corresponding to recombination in regions of CdTeS alloy with 2\% and 12\% sulfur content, respectively. After contactapplication, the spectrum consists of a single broad peak at 1.48 eV. Previous studies have shown that the nitric-phosphoric (NP) etch used in the contact procedure produces a layer of elemental tellurium (Te) on the CdTe surface. We postulate that the change in the near-junction PL spectrum is caused by a grain-boundary field effect due to perturbations of the grain-boundary conductivity andFermi level.",

author = "NREL",

year = "1998",

language = "American English",

note = "National Center for Photovoltaics Program Review Meeting ; Conference date: 08-09-1998 Through 11-09-1998",

}

TY - CONF

T1 - Back Contact Effects on the Electro-Optical Properties of CdTe/CdS Solar Cells

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - Studies of junction photoluminescence (PL) in CdTe/CdS solar cells reveal that back-contact application produces a dramatic qualitative change in the junction picosecond-PL spectrum. Prior to contact application, the spectrum has two peaks at energies of 1.501 eV and 1.457 eV, corresponding to recombination in regions of CdTeS alloy with 2% and 12% sulfur content, respectively. After contactapplication, the spectrum consists of a single broad peak at 1.48 eV. Previous studies have shown that the nitric-phosphoric (NP) etch used in the contact procedure produces a layer of elemental tellurium (Te) on the CdTe surface. We postulate that the change in the near-junction PL spectrum is caused by a grain-boundary field effect due to perturbations of the grain-boundary conductivity andFermi level.

AB - Studies of junction photoluminescence (PL) in CdTe/CdS solar cells reveal that back-contact application produces a dramatic qualitative change in the junction picosecond-PL spectrum. Prior to contact application, the spectrum has two peaks at energies of 1.501 eV and 1.457 eV, corresponding to recombination in regions of CdTeS alloy with 2% and 12% sulfur content, respectively. After contactapplication, the spectrum consists of a single broad peak at 1.48 eV. Previous studies have shown that the nitric-phosphoric (NP) etch used in the contact procedure produces a layer of elemental tellurium (Te) on the CdTe surface. We postulate that the change in the near-junction PL spectrum is caused by a grain-boundary field effect due to perturbations of the grain-boundary conductivity andFermi level.

M3 - Paper

T2 - National Center for Photovoltaics Program Review Meeting

Y2 - 8 September 1998 through 11 September 1998

ER -

Back Contact Effects on the Electro-Optical Properties of CdTe/CdS Solar Cells

Abstract

Conference

NLR Publication Number

Access to Document

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Cite this