Abstract
Back surface passivation of the GaInP$-$/ top cell in GaInP2/GaAs two-terminal tandem cells is discussed. Because of the requirement of current matching of the top and bottom cell, the top cell must be made very thin (on the order of 1 μm), and thus proper passivation of the top cell back surface is important in achieving high open-circuit voltages. A comparison is made of two candidate top-cell back surface fields: (1) an AlGaInP quaternary, and (2) GaInP2 grown to give a bandgap higher than that of the base of the cell.
Original language | American English |
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Pages | 358-360 |
Number of pages | 3 |
State | Published - 1992 |
Event | The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA Duration: 7 Oct 1991 → 11 Oct 1991 |
Conference
Conference | The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 |
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City | Las Vegas, NV, USA |
Period | 7/10/91 → 11/10/91 |
Bibliographical note
conference held 7-10 October 1991, Las Vegas, NevadaNREL Publication Number
- NREL/CP-212-4525