Back Surface Fields for GaInP2 Solar Cells

D. J. Friedman, S. R. Kurtz, A. E. Kibbler, J. M. Olson

Research output: Contribution to conferencePaperpeer-review

17 Scopus Citations

Abstract

Back surface passivation of the GaInP$-$/ top cell in GaInP2/GaAs two-terminal tandem cells is discussed. Because of the requirement of current matching of the top and bottom cell, the top cell must be made very thin (on the order of 1 μm), and thus proper passivation of the top cell back surface is important in achieving high open-circuit voltages. A comparison is made of two candidate top-cell back surface fields: (1) an AlGaInP quaternary, and (2) GaInP2 grown to give a bandgap higher than that of the base of the cell.

Original languageAmerican English
Pages358-360
Number of pages3
StatePublished - 1992
EventThe Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA
Duration: 7 Oct 199111 Oct 1991

Conference

ConferenceThe Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
CityLas Vegas, NV, USA
Period7/10/9111/10/91

Bibliographical note

conference held 7-10 October 1991, Las Vegas, Nevada

NREL Publication Number

  • NREL/CP-212-4525

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