Band Alignment of CBD Deposited Zn(O,S)/Cu(In1-xGax)Se2 Interface

Joel Pankow, Lorelle Mansfield, Kannan Ramanathan, Glenn Teeter, Kenneth Steirer, Rebekah Garris

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


Chemical bath deposition (CBD) Zn(O,S) buffer layers grown on Cu(In1-xGax)Se2 (CIGS) thin films have recently surpassed CdS in high efficiency cells (20.9%). A critical component of a CIGS device is the buffer layer - the layer that is found between the absorber CIGS layer and the ZnO window layer. Although CBD CdS is an effective buffer layer and traditionally used for devices, it is not entirely effective for high bandgap absorber films. The Zn(O,S)/CIGS interface was studied by X-ray photoelectron spectroscopy to reveal the valence band offset (VBO) and conduction band offset (CBO) as -1.15 eV and 1.17 eV respectively. Band bending that accompanies junction formation is also characterized in both layers.

Original languageAmerican English
Number of pages4
StatePublished - 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5K00-61180


  • buffer layers
  • copper indium gallium diselenide
  • zinc oxysulfide


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