Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN: Paper No. 68940L

Suhuai Wei

Research output: Contribution to conference › Paper

Original language	American English
Number of pages	11
DOIs	https://doi.org/10.1117/12.763494
State	Published - 2008
Event	Gallium Nitride Materials and Devices III: SPIE Photonics West Conference - San Jose, California Duration: 21 Jan 2008 → 21 Jan 2008

Conference	Gallium Nitride Materials and Devices III: SPIE Photonics West Conference
City	San Jose, California
Period	21/01/08 → 21/01/08

NREL Publication Number

@conference{e743ba11d1004b239fd5d5d267da4f01,

title = "Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN: Paper No. 68940L",

keywords = "band coupling model, diluted magnetic semiconductors, electron, ferromagnetism, GaN, hole",

author = "Suhuai Wei",

year = "2008",

doi = "10.1117/12.763494",

language = "American English",

note = "Gallium Nitride Materials and Devices III: SPIE Photonics West Conference ; Conference date: 21-01-2008 Through 21-01-2008",

}

TY - CONF

T1 - Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN

T2 - Gallium Nitride Materials and Devices III: SPIE Photonics West Conference

AU - Wei, Suhuai

PY - 2008

Y1 - 2008

KW - band coupling model

KW - diluted magnetic semiconductors

KW - electron

KW - ferromagnetism

KW - GaN

KW - hole

U2 - 10.1117/12.763494

DO - 10.1117/12.763494

M3 - Paper

Y2 - 21 January 2008 through 21 January 2008

ER -