Band Crossing in Isovalent Semiconductor Alloys with Large Size Mismatch: First-Principles Calculations of the Electronic Structure of Bi and N Incorporated GaAs: Article No. 193204

Suhuai Wei

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
StatePublished - 2010

NREL Publication Number

  • NREL/JA-5900-50253


  • band crossing
  • impurity levels
  • isovalent semiconductor alloys

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