Band-Edge Potentials of n-Type and p-Type GaN

J. D. Beach, R. T. Collins, J. A. Turner

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The band-edge potentials of p-GaN in aqueous solutions were examined with photocurrent measurements, and those of n-GaN were examined in both photocurrent measurements and impedance spectroscopy. The measured band-edge potentials were different for both the different materials and the different measurement techniques. These differences are attributed to differences in the interface charging due to slow charge-transfer kinetics at the interface between the semiconductor and the solution. Using photocurrent measurements, the conduction band-edge potential was Φc,s = (-1.092 - 0.063 × pH) V vs. a standard calomel electrode (SCE) for p-GaN and Φc,s = (-0.538 - 0.046 × pH) V SCE for n-GaN. Using impedance spectroscopy, the conduction band-edge potential for n-GaN was Φc,s = (-0.816 - 0.047 × pH) V SCE.

Original languageAmerican English
Pages (from-to)A899-A904
JournalJournal of the Electrochemical Society
Issue number7
StatePublished - 2003

NREL Publication Number

  • NREL/JA-590-34974


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