Band-Gap Bowing Effects in BxGa1-xAs Alloys

W. Shan; W. Walukiewicz; J. Wu; K. M. Yu; J. W. Ager; S. X. Li; E. E. Haller; J. F. Qeisz; D. J. Friedman; Sarah R. Kurtz

doi:10.1063/1.1540230

Band-Gap Bowing Effects in BxGa1-xAs Alloys

W. Shan, W. Walukiewicz, J. Wu, K. M. Yu, J. W. Ager, S. X. Li, E. E. Haller, J. F. Qeisz, D. J. Friedman, Sarah R. Kurtz

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Abstract

The effect of boron (B) on the electronic band structure of B_xGa_1-xAs alloys was investigated. It was found that under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. It was showed that B incorporation did not cause large modifications of the conduction-band structure in B_xGa_1-xAs alloys.

Original language	American English
Pages (from-to)	2696-2699
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1540230 https://doi.org/10.1063/1.1540230
State	Published - 2003

NREL Publication Number

NREL/JA-520-34475

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title = "Band-Gap Bowing Effects in BxGa1-xAs Alloys",

abstract = "The effect of boron (B) on the electronic band structure of BxGa1-xAs alloys was investigated. It was found that under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. It was showed that B incorporation did not cause large modifications of the conduction-band structure in BxGa1-xAs alloys.",

author = "W. Shan and W. Walukiewicz and J. Wu and Yu, {K. M.} and Ager, {J. W.} and Li, {S. X.} and Haller, {E. E.} and Qeisz, {J. F.} and Friedman, {D. J.} and Kurtz, {Sarah R.}",

year = "2003",

doi = "10.1063/1.1540230",

language = "American English",

volume = "93",

pages = "2696--2699",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Band-Gap Bowing Effects in BxGa1-xAs Alloys

AU - Shan, W.

AU - Walukiewicz, W.

AU - Wu, J.

AU - Yu, K. M.

AU - Ager, J. W.

AU - Li, S. X.

AU - Haller, E. E.

AU - Qeisz, J. F.

AU - Friedman, D. J.

AU - Kurtz, Sarah R.

PY - 2003

Y1 - 2003

N2 - The effect of boron (B) on the electronic band structure of BxGa1-xAs alloys was investigated. It was found that under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. It was showed that B incorporation did not cause large modifications of the conduction-band structure in BxGa1-xAs alloys.

AB - The effect of boron (B) on the electronic band structure of BxGa1-xAs alloys was investigated. It was found that under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. It was showed that B incorporation did not cause large modifications of the conduction-band structure in BxGa1-xAs alloys.

UR - http://www.scopus.com/inward/record.url?scp=0037348051&partnerID=8YFLogxK

U2 - 10.1063/1.1540230

DO - 10.1063/1.1540230

M3 - Article

AN - SCOPUS:0037348051

SN - 0021-8979

VL - 93

SP - 2696

EP - 2699

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Band-Gap Bowing Effects in BxGa1-xAs Alloys

Abstract

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