Band-Gap Bowing Effects in BxGa1-xAs Alloys

W. Shan, W. Walukiewicz, J. Wu, K. M. Yu, J. W. Ager, S. X. Li, E. E. Haller, J. F. Qeisz, D. J. Friedman, Sarah R. Kurtz

Research output: Contribution to journalArticlepeer-review

38 Scopus Citations


The effect of boron (B) on the electronic band structure of BxGa1-xAs alloys was investigated. It was found that under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. It was showed that B incorporation did not cause large modifications of the conduction-band structure in BxGa1-xAs alloys.

Original languageAmerican English
Pages (from-to)2696-2699
Number of pages4
JournalJournal of Applied Physics
Issue number5
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-34475


Dive into the research topics of 'Band-Gap Bowing Effects in BxGa1-xAs Alloys'. Together they form a unique fingerprint.

Cite this