Band-Gap Engineering in Cu(In,Ga)Se2 Thin Films Grown from (In,Ga)2Se3 Precursors

    Research output: Contribution to journalArticle


    A three-stage process starting with the deposition of (In,Ga)2Se3 precursor films has been successful in the fabrication of graded band-gap Cu(In,Ga)Se2 thin films. In this work we examine (1) the reaction of Cu + Se with (In,Ga)2Se3, which leads to a spontaneous grading in the Ga content as a function of depth through the film, and (2) modification of the Ga content in the surface region of thefilm though a final deposition of In + Ga + Se. We show how band-gap grading can be enhanced by the formation of non-uniform precursors, how counterdiffusion limits the degree of grading possible in the surface region, and how the CuxSe secondary phase acts to homogenize the film composition.
    Original languageAmerican English
    Pages (from-to)247-260
    Number of pages14
    JournalSolar Energy Materials and Solar Cells
    Issue number1-4
    StatePublished - 1996

    NREL Publication Number

    • NREL/JA-21783


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