Band-Gap Narrowing in Ordered Ga0.47In0.53As

D. J. Arent; M. Bode; K. A. Bertness; Sarah R. Kurtz; J. M. Olson

doi:10.1063/1.109640

Band-Gap Narrowing in Ordered Ga0.47In0.53As

D. J. Arent, M. Bode, K. A. Bertness, Sarah R. Kurtz, J. M. Olson

National Renewable Energy Laboratory

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Abstract

We report the first observation of band-gap energy reduction in Ga _0.47In_0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550°C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5-4 μm/h.

Original language	American English
Pages (from-to)	1806-1808
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	15
DOIs	https://doi.org/10.1063/1.109640 https://doi.org/10.1063/1.109640
State	Published - 1993

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NREL/JA-451-5128

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title = "Band-Gap Narrowing in Ordered Ga0.47In0.53As",

abstract = "We report the first observation of band-gap energy reduction in Ga 0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550°C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5-4 μm/h.",

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AU - Bode, M.

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AU - Kurtz, Sarah R.

AU - Olson, J. M.

PY - 1993

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N2 - We report the first observation of band-gap energy reduction in Ga 0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550°C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5-4 μm/h.

AB - We report the first observation of band-gap energy reduction in Ga 0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550°C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5-4 μm/h.

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Band-Gap Narrowing in Ordered Ga0.47In0.53As

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