Band-Gap Narrowing in Ordered Ga0.47In0.53As

D. J. Arent, M. Bode, K. A. Bertness, Sarah R. Kurtz, J. M. Olson

Research output: Contribution to journalArticlepeer-review

42 Scopus Citations


We report the first observation of band-gap energy reduction in Ga 0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550°C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5-4 μm/h.

Original languageAmerican English
Pages (from-to)1806-1808
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - 1993

NREL Publication Number

  • NREL/JA-451-5128


Dive into the research topics of 'Band-Gap Narrowing in Ordered Ga0.47In0.53As'. Together they form a unique fingerprint.

Cite this