Band Gap Narrowing of ZnO:N Films by Varying RF Sputtering Power in O2/N2 Mixtures

Kwang Soon Ahn; Yanfa Yan; Mowafak Al-Jassim

doi:10.1116/1.2746053

Band Gap Narrowing of ZnO:N Films by Varying RF Sputtering Power in O2/N2 Mixtures

Kwang Soon Ahn, Yanfa Yan, Mowafak Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

35 Scopus Citations

Abstract

Band gap narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive rf magnetron sputtering in O2 N2 mixture ambient. ZnO:N films with various band gaps were realized by varying N concentration, which was controlled successfully by varying the rf powers. When rf power was increased to 200 W, the ZnO:N films exhibited optical band gaps similar to that of Zn3 N2 films. Calculations based on first-principles density-functional theory revealed that the band gap narrowing is caused by the mixing of shallower N 2p states with the valence band of ZnO.

Original language	American English
Pages (from-to)	L23-L26
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	4
DOIs	https://doi.org/10.1116/1.2746053 https://doi.org/10.1116/1.2746053
State	Published - 2007

NREL Publication Number

NREL/JA-520-42159

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abstract = "Band gap narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive rf magnetron sputtering in O2 N2 mixture ambient. ZnO:N films with various band gaps were realized by varying N concentration, which was controlled successfully by varying the rf powers. When rf power was increased to 200 W, the ZnO:N films exhibited optical band gaps similar to that of Zn3 N2 films. Calculations based on first-principles density-functional theory revealed that the band gap narrowing is caused by the mixing of shallower N 2p states with the valence band of ZnO.",

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PY - 2007

Y1 - 2007

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AB - Band gap narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive rf magnetron sputtering in O2 N2 mixture ambient. ZnO:N films with various band gaps were realized by varying N concentration, which was controlled successfully by varying the rf powers. When rf power was increased to 200 W, the ZnO:N films exhibited optical band gaps similar to that of Zn3 N2 films. Calculations based on first-principles density-functional theory revealed that the band gap narrowing is caused by the mixing of shallower N 2p states with the valence band of ZnO.

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Band Gap Narrowing of ZnO:N Films by Varying RF Sputtering Power in O2/N2 Mixtures

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