Abstract
The c 0 lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In xGa 1-xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c 0 lattice parameter followed Vegard's law using c 0=0.5185nm for GaN and c 0=0.569nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E g=3.41-7.31x+14.99x 2 for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses.
Original language | American English |
---|---|
Pages (from-to) | 5190-5194 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 91 |
Issue number | 8 |
DOIs | |
State | Published - 15 Apr 2002 |
NREL Publication Number
- NREL/JA-590-32604