Band Gaps and Lattice Parameters of 0.9 Thick InxGa1-xN Films for 0</=x</=0.140

J. D. Beach, Hamda Al-Thani, S. McCray, R. T. Collins, J. A. Turner

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The c 0 lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In xGa 1-xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c 0 lattice parameter followed Vegard's law using c 0=0.5185nm for GaN and c 0=0.569nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E g=3.41-7.31x+14.99x 2 for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses.

Original languageAmerican English
Pages (from-to)5190-5194
Number of pages5
JournalJournal of Applied Physics
Issue number8
StatePublished - 15 Apr 2002

NREL Publication Number

  • NREL/JA-590-32604


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