Band Gaps and Lattice Parameters of 0.9 ..mu..m Thick InxGa1-xN Films for 0</=x</=0.140

J. D. Beach; Hamda Al-Thani; S. McCray; R. T. Collins; J. A. Turner

doi:10.1063/1.1462851

Band Gaps and Lattice Parameters of 0.9 ..mu..m Thick InxGa1-xN Films for 0</=x</=0.140

J. D. Beach
, Hamda Al-Thani
, S. McCray
, R. T. Collins
, J. A. Turner

Chemistry and Nanoscience

Colorado School of Mines

Research output: Contribution to journal › Article › peer-review

17 Scopus Citations

Abstract

The c ₀ lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In _xGa _1-xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c ₀ lattice parameter followed Vegard's law using c ₀=0.5185nm for GaN and c ₀=0.569nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E _g=3.41-7.31x+14.99x ² for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses.

Original language	American English
Pages (from-to)	5190-5194
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.1462851 https://doi.org/10.1063/1.1462851
State	Published - 15 Apr 2002

NLR Publication Number

NREL/JA-590-32604

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title = "Band Gaps and Lattice Parameters of 0.9 ..mu..m Thick InxGa1-xN Films for 0",

abstract = "The c 0 lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In xGa 1-xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c 0 lattice parameter followed Vegard's law using c 0=0.5185nm for GaN and c 0=0.569nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E g=3.41-7.31x+14.99x 2 for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses.",

author = "Beach, \{J. D.\} and Hamda Al-Thani and S. McCray and Collins, \{R. T.\} and Turner, \{J. A.\}",

year = "2002",

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doi = "10.1063/1.1462851",

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T1 - Band Gaps and Lattice Parameters of 0.9 ..mu..m Thick InxGa1-xN Films for 0

AU - Beach, J. D.

AU - Al-Thani, Hamda

AU - McCray, S.

AU - Collins, R. T.

AU - Turner, J. A.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - The c 0 lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In xGa 1-xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c 0 lattice parameter followed Vegard's law using c 0=0.5185nm for GaN and c 0=0.569nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E g=3.41-7.31x+14.99x 2 for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses.

AB - The c 0 lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In xGa 1-xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c 0 lattice parameter followed Vegard's law using c 0=0.5185nm for GaN and c 0=0.569nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E g=3.41-7.31x+14.99x 2 for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses.

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U2 - 10.1063/1.1462851

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M3 - Article

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SN - 0021-8979

VL - 91

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Band Gaps and Lattice Parameters of 0.9 ..mu..m Thick InxGa1-xN Films for 0</=x</=0.140

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