Band Structure Parameters of the Nitrides: The Origin of the Small Band Gap of InN

Suhuai Wei

Band Structure Parameters of the Nitrides: The Origin of the Small Band Gap of InN

Suhuai Wei

Research output: Contribution to conference › Paper

Original language	American English
Pages	287-288
Number of pages	2
State	Published - 2005
Event	Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (ICPS-27) - Flagstaff, Arizona Duration: 1 Jul 2004 → 1 Jul 2004

Conference

Conference	Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (ICPS-27)
City	Flagstaff, Arizona
Period	1/07/04 → 1/07/04

NREL Publication Number

NREL/CP-590-39371

Cite this

@conference{a6997d17bb3a48bbbf2892f5ad48169d,

title = "Band Structure Parameters of the Nitrides: The Origin of the Small Band Gap of InN",

author = "Suhuai Wei",

year = "2005",

language = "American English",

pages = "287--288",

note = "Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (ICPS-27) ; Conference date: 01-07-2004 Through 01-07-2004",

}