Band-to-Band and Sub-Band Gap Cathodoluminescence from GaAsP/GainP Epistructures Grown on GaAs Substrates

T. H. Gfroerer; M. J. Romero; M. M. Al-Jassim; M. W. Wanlass

doi:10.1016/j.jlumin.2006.01.177

Band-to-Band and Sub-Band Gap Cathodoluminescence from GaAsP/GainP Epistructures Grown on GaAs Substrates

T. H. Gfroerer, M. J. Romero, M. M. Al-Jassim, M. W. Wanlass

Materials Science

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

Lattice-matched GaAs_xP_1-x/GaInP double heterostructures (DHs) are grown on GaAs substrates by step grading the intervening lattice mismatch when x < 1. Cathodoluminescence (CL) measurements on these structures reveal a broad peak approximately 0.15 eV below the band-to-band (BB) emission. While the intensity of the BB peak is strong at room temperature, the sub-band-gap (SBG) feature quenches rapidly between 77 and 300 K. Beam energy-dependent and cross-sectional CL demonstrate that the SBG emission originates in the active layer near the lower interface of the DH. At 77 K, spectrally resolved plan-view CL images show little spatial correlation between the BB and SBG peaks, but when the SBG peak is observed at room temperature, the BB and SBG emission are highly correlated. The temperature-dependent spatial correlation is attributed to differences in thermal quenching of the radiative SBG recombination mechanism.

Original language	American English
Pages (from-to)	348-351
Number of pages	4
Journal	Journal of Luminescence
Volume	122-123
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jlumin.2006.01.177 https://doi.org/10.1016/j.jlumin.2006.01.177
State	Published - 2007

NREL Publication Number

NREL/JA-520-41463

Keywords

Cathodoluminescence
Double heterostructure
Lattice mismatch

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@article{1cfbec1ae3cf42818982edbe5d5d3fed,

title = "Band-to-Band and Sub-Band Gap Cathodoluminescence from GaAsP/GainP Epistructures Grown on GaAs Substrates",

abstract = "Lattice-matched GaAsxP1-x/GaInP double heterostructures (DHs) are grown on GaAs substrates by step grading the intervening lattice mismatch when x < 1. Cathodoluminescence (CL) measurements on these structures reveal a broad peak approximately 0.15 eV below the band-to-band (BB) emission. While the intensity of the BB peak is strong at room temperature, the sub-band-gap (SBG) feature quenches rapidly between 77 and 300 K. Beam energy-dependent and cross-sectional CL demonstrate that the SBG emission originates in the active layer near the lower interface of the DH. At 77 K, spectrally resolved plan-view CL images show little spatial correlation between the BB and SBG peaks, but when the SBG peak is observed at room temperature, the BB and SBG emission are highly correlated. The temperature-dependent spatial correlation is attributed to differences in thermal quenching of the radiative SBG recombination mechanism.",

keywords = "Cathodoluminescence, Double heterostructure, Lattice mismatch",

author = "Gfroerer, {T. H.} and Romero, {M. J.} and Al-Jassim, {M. M.} and Wanlass, {M. W.}",

year = "2007",

doi = "10.1016/j.jlumin.2006.01.177",

language = "American English",

volume = "122-123",

pages = "348--351",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Band-to-Band and Sub-Band Gap Cathodoluminescence from GaAsP/GainP Epistructures Grown on GaAs Substrates

AU - Gfroerer, T. H.

AU - Romero, M. J.

AU - Al-Jassim, M. M.

AU - Wanlass, M. W.

PY - 2007

Y1 - 2007

N2 - Lattice-matched GaAsxP1-x/GaInP double heterostructures (DHs) are grown on GaAs substrates by step grading the intervening lattice mismatch when x < 1. Cathodoluminescence (CL) measurements on these structures reveal a broad peak approximately 0.15 eV below the band-to-band (BB) emission. While the intensity of the BB peak is strong at room temperature, the sub-band-gap (SBG) feature quenches rapidly between 77 and 300 K. Beam energy-dependent and cross-sectional CL demonstrate that the SBG emission originates in the active layer near the lower interface of the DH. At 77 K, spectrally resolved plan-view CL images show little spatial correlation between the BB and SBG peaks, but when the SBG peak is observed at room temperature, the BB and SBG emission are highly correlated. The temperature-dependent spatial correlation is attributed to differences in thermal quenching of the radiative SBG recombination mechanism.

AB - Lattice-matched GaAsxP1-x/GaInP double heterostructures (DHs) are grown on GaAs substrates by step grading the intervening lattice mismatch when x < 1. Cathodoluminescence (CL) measurements on these structures reveal a broad peak approximately 0.15 eV below the band-to-band (BB) emission. While the intensity of the BB peak is strong at room temperature, the sub-band-gap (SBG) feature quenches rapidly between 77 and 300 K. Beam energy-dependent and cross-sectional CL demonstrate that the SBG emission originates in the active layer near the lower interface of the DH. At 77 K, spectrally resolved plan-view CL images show little spatial correlation between the BB and SBG peaks, but when the SBG peak is observed at room temperature, the BB and SBG emission are highly correlated. The temperature-dependent spatial correlation is attributed to differences in thermal quenching of the radiative SBG recombination mechanism.

KW - Cathodoluminescence

KW - Double heterostructure

KW - Lattice mismatch

UR - http://www.scopus.com/inward/record.url?scp=33750954176&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2006.01.177

DO - 10.1016/j.jlumin.2006.01.177

M3 - Article

AN - SCOPUS:33750954176

SN - 0022-2313

VL - 122-123

SP - 348

EP - 351

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-2

ER -

Band-to-Band and Sub-Band Gap Cathodoluminescence from GaAsP/GainP Epistructures Grown on GaAs Substrates

Abstract

NREL Publication Number

Keywords

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