Abstract
(Ag, CU) ( mathbf{In}, mathbf{Ga}) mathbf{Se}-{ boldsymbol{2}}-based solar cells have achieved high collection efficiencies, but defects still limit efficiencies well below the theoretical limit. The near-conduction band defect, typically observed at mathbf{E}-{ mathbf{V}} boldsymbol{+0.98} eV, has been ubiquitous across ( mathbf{Ag}, mathbf{Cu}) ( mathbf{In}, mathbf{Ga}) mathbf{Se}-{ boldsymbol{2}} samples from multiple vendors. The current work explores a wider range of composition and demonstrates the trap energy varies relative to the valence band but is approximately constant relative to the conduction band (Ec-0.13 eV). There is also no definitive dependence of the trap concentration on composition.
Original language | American English |
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Pages | 1315-1318 |
Number of pages | 4 |
DOIs | |
State | Published - 2022 |
Event | 49th IEEE Photovoltaics Specialists Conference, PVSC 2022 - Philadelphia, United States Duration: 5 Jun 2022 → 10 Jun 2022 |
Conference
Conference | 49th IEEE Photovoltaics Specialists Conference, PVSC 2022 |
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Country/Territory | United States |
City | Philadelphia |
Period | 5/06/22 → 10/06/22 |
Bibliographical note
Publisher Copyright:© 2022 IEEE.
NREL Publication Number
- NREL/CP-5900-85063
Keywords
- ACIGS
- ACIS
- CIGS
- CIS
- deep level optical spectroscopy
- defects
- DLOS
- traps