Bandgap Dependence of Near-Conduction Band State in (AgyCu1-y)(InXGa1-x)Se2 Solar Cells

Michael Miller, Alexandra Bothwell, Nicholas Valdes, Stefan Paetel, Rouin Farshchi, Ana Kanevce, William Shafarman, Darius Kuciauskas, Aaron Arehart

Research output: Contribution to conferencePaperpeer-review


(Ag, CU) ( mathbf{In}, mathbf{Ga}) mathbf{Se}-{ boldsymbol{2}}-based solar cells have achieved high collection efficiencies, but defects still limit efficiencies well below the theoretical limit. The near-conduction band defect, typically observed at mathbf{E}-{ mathbf{V}} boldsymbol{+0.98} eV, has been ubiquitous across ( mathbf{Ag}, mathbf{Cu}) ( mathbf{In}, mathbf{Ga}) mathbf{Se}-{ boldsymbol{2}} samples from multiple vendors. The current work explores a wider range of composition and demonstrates the trap energy varies relative to the valence band but is approximately constant relative to the conduction band (Ec-0.13 eV). There is also no definitive dependence of the trap concentration on composition.

Original languageAmerican English
Number of pages4
StatePublished - 2022
Event49th IEEE Photovoltaics Specialists Conference, PVSC 2022 - Philadelphia, United States
Duration: 5 Jun 202210 Jun 2022


Conference49th IEEE Photovoltaics Specialists Conference, PVSC 2022
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

NREL Publication Number

  • NREL/CP-5900-85063


  • ACIS
  • CIGS
  • CIS
  • deep level optical spectroscopy
  • defects
  • DLOS
  • traps


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