Bandgap Reduction and Photoelectrochemical Properties of ZnO:N Films Deposited by Reactive RF Magnetron Sputtering

Kwang Soon Ahn; Sudhakar Shet; Todd Deutsch; Yanfa Yan; John Turner; N. M. Ravindra; M. Al-Jassim

Bandgap Reduction and Photoelectrochemical Properties of ZnO:N Films Deposited by Reactive RF Magnetron Sputtering

Kwang Soon Ahn, Sudhakar Shet, Todd Deutsch, Yanfa Yan, John Turner, N. M. Ravindra, M. Al-Jassim

Research output: Contribution to conference › Paper › peer-review

13 Scopus Citations

Abstract

ZnO:N films were deposited by reactive RF magnetron sputtering in mixed N₂ and O₂ gas ambient. Their PEC properties were measured and compared with those of as-grown and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total currents than pure ZnO thin films. With combined ultraviolet/infrared and color filtering, our data indicate that the main contribution to the high photocurrent is from the absorption of light in long-wavelength regions. Our results demonstrate that N incorporation in ZnO can narrow the bandgap and create absorption in the visible-light region for ZnO films, suggesting that N incorporation could be a potential method to improve the efficiency of PEC water splitting using ZnO-based materials.

Original language	American English
Pages	952-961
Number of pages	10
State	Published - 2008
Event	Materials Science and Technology Conference and Exhibition, MS and T'08 - Pittsburgh, PA, United States Duration: 5 Oct 2008 → 9 Oct 2008

Conference

Conference	Materials Science and Technology Conference and Exhibition, MS and T'08
Country/Territory	United States
City	Pittsburgh, PA
Period	5/10/08 → 9/10/08

NREL Publication Number

NREL/CP-520-43604

Keywords

bandgap
crystallinity
gas ambient
photoelectrochemical
RF power
sputter
visible light
ZnO

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Bandgap Reduction and Photoelectrochemical Properties of ZnO:N Films Deposited by Reactive RF Magnetron Sputtering",

abstract = "ZnO:N films were deposited by reactive RF magnetron sputtering in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-grown and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total currents than pure ZnO thin films. With combined ultraviolet/infrared and color filtering, our data indicate that the main contribution to the high photocurrent is from the absorption of light in long-wavelength regions. Our results demonstrate that N incorporation in ZnO can narrow the bandgap and create absorption in the visible-light region for ZnO films, suggesting that N incorporation could be a potential method to improve the efficiency of PEC water splitting using ZnO-based materials.",

keywords = "bandgap, crystallinity, gas ambient, photoelectrochemical, RF power, sputter, visible light, ZnO",

author = "Ahn, {Kwang Soon} and Sudhakar Shet and Todd Deutsch and Yanfa Yan and John Turner and Ravindra, {N. M.} and M. Al-Jassim",

year = "2008",

language = "American English",

pages = "952--961",

note = "Materials Science and Technology Conference and Exhibition, MS and T'08 ; Conference date: 05-10-2008 Through 09-10-2008",

}

Bandgap Reduction and Photoelectrochemical Properties of ZnO:N Films Deposited by Reactive RF Magnetron Sputtering. / Ahn, Kwang Soon; Shet, Sudhakar; Deutsch, Todd et al.
2008. 952-961 Paper presented at Materials Science and Technology Conference and Exhibition, MS and T'08, Pittsburgh, PA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Bandgap Reduction and Photoelectrochemical Properties of ZnO:N Films Deposited by Reactive RF Magnetron Sputtering

AU - Ahn, Kwang Soon

AU - Shet, Sudhakar

AU - Deutsch, Todd

AU - Yan, Yanfa

AU - Turner, John

AU - Ravindra, N. M.

AU - Al-Jassim, M.

PY - 2008

Y1 - 2008

N2 - ZnO:N films were deposited by reactive RF magnetron sputtering in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-grown and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total currents than pure ZnO thin films. With combined ultraviolet/infrared and color filtering, our data indicate that the main contribution to the high photocurrent is from the absorption of light in long-wavelength regions. Our results demonstrate that N incorporation in ZnO can narrow the bandgap and create absorption in the visible-light region for ZnO films, suggesting that N incorporation could be a potential method to improve the efficiency of PEC water splitting using ZnO-based materials.

AB - ZnO:N films were deposited by reactive RF magnetron sputtering in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-grown and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total currents than pure ZnO thin films. With combined ultraviolet/infrared and color filtering, our data indicate that the main contribution to the high photocurrent is from the absorption of light in long-wavelength regions. Our results demonstrate that N incorporation in ZnO can narrow the bandgap and create absorption in the visible-light region for ZnO films, suggesting that N incorporation could be a potential method to improve the efficiency of PEC water splitting using ZnO-based materials.

KW - bandgap

KW - crystallinity

KW - gas ambient

KW - photoelectrochemical

KW - RF power

KW - sputter

KW - visible light

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=63749119830&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:63749119830

SP - 952

EP - 961

T2 - Materials Science and Technology Conference and Exhibition, MS and T'08

Y2 - 5 October 2008 through 9 October 2008

ER -

Bandgap Reduction and Photoelectrochemical Properties of ZnO:N Films Deposited by Reactive RF Magnetron Sputtering

Abstract

Conference

NREL Publication Number

Keywords

UN SDGs

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