Abstract
Voltage pulses of variable length were applied to CuIn1-xGaxSe2/CdS (0 < x < 1) junction solar cells. The resulting transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead they follow a simpleelectrostatic model based on electrostatic charging of traps.
| Original language | American English |
|---|---|
| Number of pages | 8 |
| State | Published - 2003 |
| Event | 2003 Materials Research Society Spring Meeting - San Francisco, California Duration: 21 Apr 2003 → 25 Apr 2003 |
Conference
| Conference | 2003 Materials Research Society Spring Meeting |
|---|---|
| City | San Francisco, California |
| Period | 21/04/03 → 25/04/03 |
NREL Publication Number
- NREL/CP-520-33953
Keywords
- chemical bath deposition (CBD)
- deep level transient spectroscopy (DLTS)
- junction-capacitance
- PV
- spectrally resolved cathodoluminescence (SRCL)
- trap filling
- voltage pulses