Barrier to Trap Filling CuIn1-xGaxSe2: Preprint

    Research output: Contribution to conferencePaper


    Voltage pulses of variable length were applied to CuIn1-xGaxSe2/CdS (0 < x < 1) junction solar cells. The resulting transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead they follow a simpleelectrostatic model based on electrostatic charging of traps.
    Original languageAmerican English
    Number of pages8
    StatePublished - 2003
    Event2003 Materials Research Society Spring Meeting - San Francisco, California
    Duration: 21 Apr 200325 Apr 2003


    Conference2003 Materials Research Society Spring Meeting
    CitySan Francisco, California

    NREL Publication Number

    • NREL/CP-520-33953


    • chemical bath deposition (CBD)
    • deep level transient spectroscopy (DLTS)
    • junction-capacitance
    • PV
    • spectrally resolved cathodoluminescence (SRCL)
    • trap filling
    • voltage pulses


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