BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys

BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

Nitrogen alloyed III-V semiconductor compounds have been intensely studied in recent years due to unusual effects caused by nitrogen alloying. These effects are exploited in band gap engineering for specific applications such as solar cells and blue lasers.

Original language	American English
Pages	125-126
Number of pages	2
State	Published - 2000
Event	Program and NCPV Program Review Meeting 2000 - Denver, Colorado Duration: 16 Apr 2000 → 19 Apr 2000

Conference

Conference	Program and NCPV Program Review Meeting 2000
City	Denver, Colorado
Period	16/04/00 → 19/04/00

NREL Publication Number

NREL/CP-590-28296

Keywords

amorphous Si
applications
cadmium telluride (CdTe) photovoltaic solar cells modules
components
concentrators
copper indium diselenide (CIS)
crystalline silicon (x-Si) (c-Si)
manufacturing
markets
NCPV
photovoltaics (PV)
research and development (R&D)
systems
systems integration
thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://www.nrel.gov/docs/fy00osti/28296.pdf

Cite this

@conference{395a4017556a42a7a3799780ae711c58,

title = "BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys",

abstract = "Nitrogen alloyed III-V semiconductor compounds have been intensely studied in recent years due to unusual effects caused by nitrogen alloying. These effects are exploited in band gap engineering for specific applications such as solar cells and blue lasers.",

keywords = "amorphous Si, applications, cadmium telluride (CdTe) photovoltaic solar cells modules, components, concentrators, copper indium diselenide (CIS), crystalline silicon (x-Si) (c-Si), manufacturing, markets, NCPV, photovoltaics (PV), research and development (R&D), systems, systems integration, thin films",

author = "NREL",

year = "2000",

language = "American English",

pages = "125--126",

note = "Program and NCPV Program Review Meeting 2000 ; Conference date: 16-04-2000 Through 19-04-2000",

}

TY - CONF

T1 - BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys

AU - NREL, null

PY - 2000

Y1 - 2000

N2 - Nitrogen alloyed III-V semiconductor compounds have been intensely studied in recent years due to unusual effects caused by nitrogen alloying. These effects are exploited in band gap engineering for specific applications such as solar cells and blue lasers.

AB - Nitrogen alloyed III-V semiconductor compounds have been intensely studied in recent years due to unusual effects caused by nitrogen alloying. These effects are exploited in band gap engineering for specific applications such as solar cells and blue lasers.

KW - amorphous Si

KW - applications

KW - cadmium telluride (CdTe) photovoltaic solar cells modules

KW - components

KW - concentrators

KW - copper indium diselenide (CIS)

KW - crystalline silicon (x-Si) (c-Si)

KW - manufacturing

KW - markets

KW - NCPV

KW - photovoltaics (PV)

KW - research and development (R&D)

KW - systems

KW - systems integration

KW - thin films

M3 - Paper

SP - 125

EP - 126

T2 - Program and NCPV Program Review Meeting 2000

Y2 - 16 April 2000 through 19 April 2000

ER -

BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys

Abstract

Conference

NREL Publication Number

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this