Abstract
II-VI and I-III-VI solar cells are promising for future thin-film photovoltaics. In this paper, the roles of electron-beam-induced current (EBIC) and cathodoluminescence in evaluating the influence of interfaces on those solar cells are reviewed. CdTe and Cu(In,Ga)Se2 (CIGS) are the absorbers of the cells investigated. For CdTe/CdS solar cells, a detailed study has been conducted of the effects of grain boundaries and the Te/CdTe or ZnTe:Cu/CdTe interfaces for back-contacting. For CIGS solar cells, we have investigated different buffer layer schemes, showing that these interfaces are critical in the definition of the mechanisms for carrier collection.
| Original language | American English |
|---|---|
| Pages (from-to) | 445-455 |
| Number of pages | 11 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 10 |
| Issue number | 7 |
| DOIs | |
| State | Published - 2002 |
NREL Publication Number
- NREL/JA-520-31305