BGaInAs Alloys Lattice Matched to GaAs

J. F. Geisz; D. J. Friedman; J. M. Olson; Sarah R. Kurtz; R. C. Reedy; A. B. Swartzlander; B. M. Keyes; A. G. Norman

doi:10.1063/1.126058

BGaInAs Alloys Lattice Matched to GaAs

J. F. Geisz, D. J. Friedman, J. M. Olson, Sarah R. Kurtz, R. C. Reedy, A. B. Swartzlander, B. M. Keyes, A. G. Norman

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the epitaxial growth of zinc-blende B_xGa_{1 - x - y} In_yAs and B_xGa_{1 - x}As on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of B_xGa_{1 - x}As increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial B_xGa_{1 - x - y}In_y,As layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga_{1 - y}In_yAs layer with the same band gap.

Original language	American English
Pages (from-to)	1443-1445
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	11
DOIs	https://doi.org/10.1063/1.126058 https://doi.org/10.1063/1.126058
State	Published - 2000

NREL Publication Number

NREL/JA-520-27585

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title = "BGaInAs Alloys Lattice Matched to GaAs",

abstract = "We report the epitaxial growth of zinc-blende BxGa1 - x - y InyAs and BxGa1 - xAs on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1 - xAs increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1 - x - yIny,As layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1 - yInyAs layer with the same band gap.",

author = "Geisz, {J. F.} and Friedman, {D. J.} and Olson, {J. M.} and Kurtz, {Sarah R.} and Reedy, {R. C.} and Swartzlander, {A. B.} and Keyes, {B. M.} and Norman, {A. G.}",

year = "2000",

doi = "10.1063/1.126058",

language = "American English",

volume = "76",

pages = "1443--1445",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - BGaInAs Alloys Lattice Matched to GaAs

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Olson, J. M.

AU - Kurtz, Sarah R.

AU - Reedy, R. C.

AU - Swartzlander, A. B.

AU - Keyes, B. M.

AU - Norman, A. G.

PY - 2000

Y1 - 2000

N2 - We report the epitaxial growth of zinc-blende BxGa1 - x - y InyAs and BxGa1 - xAs on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1 - xAs increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1 - x - yIny,As layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1 - yInyAs layer with the same band gap.

AB - We report the epitaxial growth of zinc-blende BxGa1 - x - y InyAs and BxGa1 - xAs on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1 - xAs increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1 - x - yIny,As layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1 - yInyAs layer with the same band gap.

UR - http://www.scopus.com/inward/record.url?scp=0001636925&partnerID=8YFLogxK

U2 - 10.1063/1.126058

DO - 10.1063/1.126058

M3 - Article

AN - SCOPUS:0001636925

SN - 0003-6951

VL - 76

SP - 1443

EP - 1445

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

BGaInAs Alloys Lattice Matched to GaAs

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