BGaInAs Alloys Lattice Matched to GaAs

J. F. Geisz, D. J. Friedman, J. M. Olson, Sarah R. Kurtz, R. C. Reedy, A. B. Swartzlander, B. M. Keyes, A. G. Norman

Research output: Contribution to journalArticlepeer-review

90 Scopus Citations


We report the epitaxial growth of zinc-blende BxGa1 - x - y InyAs and BxGa1 - xAs on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1 - xAs increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1 - x - yIny,As layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1 - yInyAs layer with the same band gap.

Original languageAmerican English
Pages (from-to)1443-1445
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 2000

NREL Publication Number

  • NREL/JA-520-27585


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