BGaInAs Solar Cells Lattice-Matched to GaAs

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9 Scopus Citations


We have recently demonstrated the epitaxial growth of BxGa1-x-yInyAs on GaAs substrates by metal-organic chemical vapor deposition. This new material has a band-gap less than that of GaAs, and can be grown lattice-matched to GaAs. Such a material, used as the second or third junction in a strain-free multijunction III-V solar cell, has the potential to increase the total cell efficiency. We report here on the performance of single-junction solar cells with 1.36-eV carbon- and silicon-doped B0.03Ga0.91in0.06As bases and compare them with similar GaAs and Ga0.94ln0.06As cells. The BGalnAs cells have exhibited less-than-ideal open-circuit voltages (Voc) and fill factors (FF) of 0.57-0.66 V and 69%-73%, respectively. Poor red response of the quantum efficiencies and low short-circuit currents (Jsc) of 10-14 mA/cm2 under AM1.5D conditions indicate that the minority-carrier diffusion lengths are short (> 0.1 μm). The n-on-p devices perform slightly better than the p-on-n devices.

Original languageAmerican English
Number of pages4
StatePublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 15 Sep 200022 Sep 2000


Conference28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NREL Publication Number

  • NREL/CP-520-28924


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