BGaInAs Solar Cells Lattice-Matched to GaAs

J. F. Geisz; D. J. Friedman; Sarah Kurtz

doi:10.1109/PVSC.2000.916052

BGaInAs Solar Cells Lattice-Matched to GaAs

J. F. Geisz, D. J. Friedman, Sarah Kurtz

Research output: Contribution to conference › Paper › peer-review

9 Scopus Citations

Abstract

We have recently demonstrated the epitaxial growth of B_xGa_1-x-yIn_yAs on GaAs substrates by metal-organic chemical vapor deposition. This new material has a band-gap less than that of GaAs, and can be grown lattice-matched to GaAs. Such a material, used as the second or third junction in a strain-free multijunction III-V solar cell, has the potential to increase the total cell efficiency. We report here on the performance of single-junction solar cells with 1.36-eV carbon- and silicon-doped B_0.03Ga_0.91in_0.06As bases and compare them with similar GaAs and Ga_0.94ln_0.06As cells. The BGalnAs cells have exhibited less-than-ideal open-circuit voltages (V_oc) and fill factors (FF) of 0.57-0.66 V and 69%-73%, respectively. Poor red response of the quantum efficiencies and low short-circuit currents (J_sc) of 10-14 mA/cm² under AM1.5D conditions indicate that the minority-carrier diffusion lengths are short (> 0.1 μm). The n-on-p devices perform slightly better than the p-on-n devices.

Original language	American English
Pages	990-993
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2000.916052
State	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	15/09/00 → 22/09/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NREL Publication Number

NREL/CP-520-28924

Access to Document

10.1109/PVSC.2000.916052

Cite this

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title = "BGaInAs Solar Cells Lattice-Matched to GaAs",

abstract = "We have recently demonstrated the epitaxial growth of BxGa1-x-yInyAs on GaAs substrates by metal-organic chemical vapor deposition. This new material has a band-gap less than that of GaAs, and can be grown lattice-matched to GaAs. Such a material, used as the second or third junction in a strain-free multijunction III-V solar cell, has the potential to increase the total cell efficiency. We report here on the performance of single-junction solar cells with 1.36-eV carbon- and silicon-doped B0.03Ga0.91in0.06As bases and compare them with similar GaAs and Ga0.94ln0.06As cells. The BGalnAs cells have exhibited less-than-ideal open-circuit voltages (Voc) and fill factors (FF) of 0.57-0.66 V and 69%-73%, respectively. Poor red response of the quantum efficiencies and low short-circuit currents (Jsc) of 10-14 mA/cm2 under AM1.5D conditions indicate that the minority-carrier diffusion lengths are short (> 0.1 μm). The n-on-p devices perform slightly better than the p-on-n devices.",

author = "Geisz, {J. F.} and Friedman, {D. J.} and Sarah Kurtz",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

year = "2000",

doi = "10.1109/PVSC.2000.916052",

language = "American English",

pages = "990--993",

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T1 - BGaInAs Solar Cells Lattice-Matched to GaAs

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Kurtz, Sarah

PY - 2000

Y1 - 2000

N2 - We have recently demonstrated the epitaxial growth of BxGa1-x-yInyAs on GaAs substrates by metal-organic chemical vapor deposition. This new material has a band-gap less than that of GaAs, and can be grown lattice-matched to GaAs. Such a material, used as the second or third junction in a strain-free multijunction III-V solar cell, has the potential to increase the total cell efficiency. We report here on the performance of single-junction solar cells with 1.36-eV carbon- and silicon-doped B0.03Ga0.91in0.06As bases and compare them with similar GaAs and Ga0.94ln0.06As cells. The BGalnAs cells have exhibited less-than-ideal open-circuit voltages (Voc) and fill factors (FF) of 0.57-0.66 V and 69%-73%, respectively. Poor red response of the quantum efficiencies and low short-circuit currents (Jsc) of 10-14 mA/cm2 under AM1.5D conditions indicate that the minority-carrier diffusion lengths are short (> 0.1 μm). The n-on-p devices perform slightly better than the p-on-n devices.

AB - We have recently demonstrated the epitaxial growth of BxGa1-x-yInyAs on GaAs substrates by metal-organic chemical vapor deposition. This new material has a band-gap less than that of GaAs, and can be grown lattice-matched to GaAs. Such a material, used as the second or third junction in a strain-free multijunction III-V solar cell, has the potential to increase the total cell efficiency. We report here on the performance of single-junction solar cells with 1.36-eV carbon- and silicon-doped B0.03Ga0.91in0.06As bases and compare them with similar GaAs and Ga0.94ln0.06As cells. The BGalnAs cells have exhibited less-than-ideal open-circuit voltages (Voc) and fill factors (FF) of 0.57-0.66 V and 69%-73%, respectively. Poor red response of the quantum efficiencies and low short-circuit currents (Jsc) of 10-14 mA/cm2 under AM1.5D conditions indicate that the minority-carrier diffusion lengths are short (> 0.1 μm). The n-on-p devices perform slightly better than the p-on-n devices.

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DO - 10.1109/PVSC.2000.916052

M3 - Paper

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SP - 990

EP - 993

T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

BGaInAs Solar Cells Lattice-Matched to GaAs

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