Abstract
A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.
| Original language | American English |
|---|---|
| Patent number | 8,513,050 |
| Filing date | 20/08/13 |
| State | Published - 2013 |
Bibliographical note
Assignee: U.S. Department of Energy (Washington, DC)NREL Publication Number
- NREL/PT-5900-62035
