Bi-Se Doped with Cu, P-Type Semiconductor

Raghu Bhattacharya (Inventor)

Research output: Patent


A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.
Original languageAmerican English
Patent number8,513,050
Filing date20/08/13
StatePublished - 2013

Bibliographical note

Assignee: U.S. Department of Energy (Washington, DC)

NREL Publication Number

  • NREL/PT-5900-62035


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