Bias Annealing of Doped Amorphous Silicon

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	L21-L26
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	54
Issue number	1
DOIs	https://doi.org/10.1080/13642818608243173
State	Published - 1986

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

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title = "Bias Annealing of Doped Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1986",

doi = "10.1080/13642818608243173",

language = "American English",

volume = "54",

pages = "L21--L26",

journal = "Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties",

issn = "1364-2812",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Bias Annealing of Doped Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1986

Y1 - 1986

U2 - 10.1080/13642818608243173

DO - 10.1080/13642818608243173

M3 - Article

SN - 1364-2812

VL - 54

SP - L21-L26

JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

IS - 1

ER -