Bimodal Size Distribution of Self-Assembled InxGa1-xAs Quantum Dots

S. Anders; C. S. Kim; B. Klein; Mark W. Keller; R. P. Mirin; A. G. Norman

doi:10.1103/PhysRevB.66.125309

Bimodal Size Distribution of Self-Assembled InxGa1-xAs Quantum Dots

S. Anders, C. S. Kim, B. Klein, Mark W. Keller, R. P. Mirin, A. G. Norman

Materials Science

National Institute of Standards and Technology

Research output: Contribution to journal › Article › peer-review

34 Scopus Citations

Abstract

We investigate quantization of energy levels in self-assembled In_xGa_1-xAs quantum dots that are embedded in a GaAs matrix. We use capacitance and photoluminescence spectroscopies to analyze the evolution of the energy levels with varying amounts of deposited In_xGa_1-xAs. These techniques suggest that the size distribution of the quantum dots contains two well-separated peaks. Transmission electron microscopy confirms a bimodal size distribution and further shows that the big and the small quantum dots have different shapes. In addition, we use an effective-mass based method to calculate the lowest energy states of quantum dots with the physical dimensions obtained by transmission electron and atomic force microscopies. Our results allow us to construct the energy-level diagrams of the two kinds of quantum dots.

Original language	American English
Article number	125309
Pages (from-to)	1253091-1253095
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.66.125309 https://doi.org/10.1103/PhysRevB.66.125309
State	Published - 15 Sep 2002

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NREL/JA-520-33305

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title = "Bimodal Size Distribution of Self-Assembled InxGa1-xAs Quantum Dots",

abstract = "We investigate quantization of energy levels in self-assembled InxGa1-xAs quantum dots that are embedded in a GaAs matrix. We use capacitance and photoluminescence spectroscopies to analyze the evolution of the energy levels with varying amounts of deposited InxGa1-xAs. These techniques suggest that the size distribution of the quantum dots contains two well-separated peaks. Transmission electron microscopy confirms a bimodal size distribution and further shows that the big and the small quantum dots have different shapes. In addition, we use an effective-mass based method to calculate the lowest energy states of quantum dots with the physical dimensions obtained by transmission electron and atomic force microscopies. Our results allow us to construct the energy-level diagrams of the two kinds of quantum dots.",

author = "S. Anders and Kim, {C. S.} and B. Klein and Keller, {Mark W.} and Mirin, {R. P.} and Norman, {A. G.}",

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AU - Anders, S.

AU - Kim, C. S.

AU - Klein, B.

AU - Keller, Mark W.

AU - Mirin, R. P.

AU - Norman, A. G.

PY - 2002/9/15

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AB - We investigate quantization of energy levels in self-assembled InxGa1-xAs quantum dots that are embedded in a GaAs matrix. We use capacitance and photoluminescence spectroscopies to analyze the evolution of the energy levels with varying amounts of deposited InxGa1-xAs. These techniques suggest that the size distribution of the quantum dots contains two well-separated peaks. Transmission electron microscopy confirms a bimodal size distribution and further shows that the big and the small quantum dots have different shapes. In addition, we use an effective-mass based method to calculate the lowest energy states of quantum dots with the physical dimensions obtained by transmission electron and atomic force microscopies. Our results allow us to construct the energy-level diagrams of the two kinds of quantum dots.

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ER -

Bimodal Size Distribution of Self-Assembled InxGa1-xAs Quantum Dots

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