Bismuth in Lead-Tin Alloy Perovskites: Effect on Material Properties and Photovoltaic Device Performance

Metal halide perovskites (MHPs) have a strong potential for optoelectronic applications, especially photovoltaics. A significant advantage offered by MHPs is their bandgap tunability via chemical substitution and alloying, with lead-tin alloys producing the narrowest reported bandgaps of ~1.2 eV. Efforts to further narrow the bandgap of MHPs by alloying in other elements, such as bismuth, have largely been unsuccessful due to the introduction of defective electronic states, which severely diminish electronic quality. In this study, we examine the effects of bismuth on a lead-tin alloyed MHP, motivated by the narrow bandgap of alloyed lead-tin MHPs. We find that the defect screening observed in lead-tin MHPs is not sufficient to screen the defect level introduced by bismuth, as evidenced by quenched photoluminescence, decreased mobility, and severely reduced performance in a photovoltaic device. Density functional theory calculations suggest that midgap states are introduced by bismuth addition over a range of chemical and compositional conditions. We further observe through wavelength-dependent photoconductivity that free carriers are generated out to ~0.9 eV in bismuth-containing samples, which could be of potential interest for NIR photodetection.