Bismuth Incorporation into Gallium Phosphide

Theresa M. Christian, Daniel A. Beaton, Angelo Mascarenhas, Kirstin Alberi

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.

Original languageAmerican English
Number of pages7
StatePublished - 2016
EventInternational Symposium on Clusters and Nanomaterials - Richmond, United States
Duration: 26 Oct 201529 Oct 2015


ConferenceInternational Symposium on Clusters and Nanomaterials
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2016 SPIE.

NREL Publication Number

  • NREL/CP-5K00-68380


  • Dilute bismide
  • GaP
  • Interstitials
  • Molecular beam epitaxy


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