Bismuth Incorporation into Gallium Phosphide

Theresa M. Christian; Daniel A. Beaton; Angelo Mascarenhas; Kirstin Alberi

doi:10.1117/12.2245432

Bismuth Incorporation into Gallium Phosphide

Theresa M. Christian, Daniel A. Beaton, Angelo Mascarenhas, Kirstin Alberi

Materials Science

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Gallium phosphide bismide (GaP_1-xBi_x) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP_0.99Bi_0.01.

Original language	American English
Number of pages	7
DOIs	https://doi.org/10.1117/12.2245432 https://doi.org/10.1117/12.2245432
State	Published - 2016
Event	International Symposium on Clusters and Nanomaterials - Richmond, United States Duration: 26 Oct 2015 → 29 Oct 2015

Conference

Conference	International Symposium on Clusters and Nanomaterials
Country/Territory	United States
City	Richmond
Period	26/10/15 → 29/10/15

Bibliographical note

Publisher Copyright:
© 2016 SPIE.

NREL Publication Number

NREL/CP-5K00-68380

Keywords

Dilute bismide
GaP
Interstitials
Molecular beam epitaxy

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@conference{cfe757c1e33c4069b7f33f7a2490507c,

title = "Bismuth Incorporation into Gallium Phosphide",

abstract = "Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.",

keywords = "Dilute bismide, GaP, Interstitials, Molecular beam epitaxy",

author = "Christian, {Theresa M.} and Beaton, {Daniel A.} and Angelo Mascarenhas and Kirstin Alberi",

note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; International Symposium on Clusters and Nanomaterials ; Conference date: 26-10-2015 Through 29-10-2015",

year = "2016",

doi = "10.1117/12.2245432",

language = "American English",

}

TY - CONF

T1 - Bismuth Incorporation into Gallium Phosphide

AU - Christian, Theresa M.

AU - Beaton, Daniel A.

AU - Mascarenhas, Angelo

AU - Alberi, Kirstin

PY - 2016

Y1 - 2016

N2 - Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.

AB - Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.

KW - Dilute bismide

KW - GaP

KW - Interstitials

KW - Molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85017140212&partnerID=8YFLogxK

U2 - 10.1117/12.2245432

DO - 10.1117/12.2245432

M3 - Paper

AN - SCOPUS:85017140212

T2 - International Symposium on Clusters and Nanomaterials

Y2 - 26 October 2015 through 29 October 2015

ER -

Bismuth Incorporation into Gallium Phosphide

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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