Bismuth-Induced Raman Modes in GaP1-xBix

Theresa Christian; Brian Fluegel; Kirstin Alberi; Daniel Beaton; Angelo Mascarenhas

doi:10.7567/JJAP.55.108002

Bismuth-Induced Raman Modes in GaP1-xBix

Theresa Christian, Brian Fluegel, Kirstin Alberi, Daniel Beaton, Angelo Mascarenhas

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

Dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on _1-xBi_x epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314cm%1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.

Original language	American English
Article number	108002
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	55
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.55.108002 https://doi.org/10.7567/JJAP.55.108002
State	Published - 2016

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

NREL Publication Number

NREL/JA-5K00-66536

Keywords

dilute bismide alloys
local vibrational modes
semiconductors

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@article{5a7f6ff363a24bf5a876705a80d4262e,

title = "Bismuth-Induced Raman Modes in GaP1-xBix",

abstract = "Dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on 1-xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314cm%1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.",

keywords = "dilute bismide alloys, local vibrational modes, semiconductors",

author = "Theresa Christian and Brian Fluegel and Kirstin Alberi and Daniel Beaton and Angelo Mascarenhas",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

doi = "10.7567/JJAP.55.108002",

language = "American English",

volume = "55",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Bismuth-Induced Raman Modes in GaP1-xBix

AU - Christian, Theresa

AU - Fluegel, Brian

AU - Alberi, Kirstin

AU - Beaton, Daniel

AU - Mascarenhas, Angelo

PY - 2016

Y1 - 2016

N2 - Dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on 1-xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314cm%1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.

AB - Dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on 1-xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314cm%1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.

KW - dilute bismide alloys

KW - local vibrational modes

KW - semiconductors

UR - http://www.scopus.com/inward/record.url?scp=84989321424&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.108002

DO - 10.7567/JJAP.55.108002

M3 - Article

AN - SCOPUS:84989321424

SN - 0021-4922

VL - 55

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 10

M1 - 108002

ER -

Bismuth-Induced Raman Modes in GaP1-xBix

Abstract

Bibliographical note

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Keywords

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