Bismuth-Induced Raman Modes in GaP1-xBix

Theresa Christian, Brian Fluegel, Kirstin Alberi, Daniel Beaton, Angelo Mascarenhas

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7 Scopus Citations


Dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on 1-xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314cm%1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.

Original languageAmerican English
Article number108002
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number10
StatePublished - 2016

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

NREL Publication Number

  • NREL/JA-5K00-66536


  • dilute bismide alloys
  • local vibrational modes
  • semiconductors


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